Effect of a Second-Order Phase Transition on the Electrical Conductivity of Metal/Semiconductor Structures
- Authors: Nabiullin I.R.1, Gadiev R.M.1, Lachinov A.N.2
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Affiliations:
- M. Akmulla Bashkir State Pedagogical University
- Institute of Physics of Molecules and Crystals, Ufa Scientific Center, Russian Academy of Sciences
- Issue: Vol 53, No 4 (2019)
- Pages: 439-441
- Section: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/205927
- DOI: https://doi.org/10.1134/S1063782619040201
- ID: 205927
Cite item
Abstract
The properties of the Cr–p-Si potential barrier near the temperature of the antiferromagnetic–paramagnetic phase transition in chromium are investigated. A significant change in the potential barrier and an anomalous increase in the conductivity in the Cr–p-Si–Au structure are observed near the temperature of the second-order antiferromagnetic–paramagnetic phase transition in chromium. It is established that current fluctuations in the structure are enhanced when approaching the phase-transition point. The experimental results are interpreted based on the assumption that the observed change in the electron-transport properties of the Cr–Si interface is due to a shift of the Fermi quasi-level in chromium as a result of the second-order phase transition.
About the authors
I. R. Nabiullin
M. Akmulla Bashkir State Pedagogical University
Email: gadiev.radik@gmail.com
Russian Federation, Ufa, 450000
R. M. Gadiev
M. Akmulla Bashkir State Pedagogical University
Author for correspondence.
Email: gadiev.radik@gmail.com
Russian Federation, Ufa, 450000
A. N. Lachinov
Institute of Physics of Molecules and Crystals, Ufa Scientific Center, Russian Academy of Sciences
Email: gadiev.radik@gmail.com
Russian Federation, Ufa, 450054