Email this article Concentric Hexagonal GaN Structures for Nanophotonics, Fabricated by Selective Vapor-Phase Epitaxy with Ion-Beam Etching
- Authors: Mitrofanov M.I.1,2, Levitskii I.V.1,2, Voznyuk G.V.3, Tatarinov E.E.3, Rodin S.N.1,2, Kaliteevski M.A.1,3,4, Evtikhiev V.P.4
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Affiliations:
- Ioffe Institute
- SHM R&E Center
- ITMO University
- St. Petersburg National Research Academic University
- Issue: Vol 52, No 7 (2018)
- Pages: 954-956
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/203761
- DOI: https://doi.org/10.1134/S1063782618070151
- ID: 203761
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Abstract
In the Si3N4 layer, coaxial and single submicrometer GaN structures of hexagonal shape with pyramidal facets are formed by selective vapor-phase epitaxy in windows produced with a focused ion beam. It is found that coaxial hexagonal structures are formed during the growth process in ring-shaped mask windows.
About the authors
M. I. Mitrofanov
Ioffe Institute; SHM R&E Center
Email: Kalit@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021
I. V. Levitskii
Ioffe Institute; SHM R&E Center
Email: Kalit@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021
G. V. Voznyuk
ITMO University
Email: Kalit@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101
E. E. Tatarinov
ITMO University
Email: Kalit@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101
S. N. Rodin
Ioffe Institute; SHM R&E Center
Email: Kalit@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021
M. A. Kaliteevski
Ioffe Institute; ITMO University; St. Petersburg National Research Academic University
Author for correspondence.
Email: Kalit@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 194021
V. P. Evtikhiev
St. Petersburg National Research Academic University
Email: Kalit@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
