Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films

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It is shown that 9-μm-thick semi-insulating surface layers can be formed in moderately doped n-type silicon carbide (donor concentration 2 × 1016 cm–3) via the comparatively low-dose (7 × 1011 cm–2) implantation of high-energy (53 MeV) argon ions. The free-carrier removal rate is estimated at ~104 cm–1. The resistivity of the semi-insulator is no less than 7 × 1012 Ω cm. Analysis of the monopolar current of electron injection into the semi-insulator shows that the impurity-conductivity compensation is due to radiationinduced defects pinning the equilibrium Fermi level at a depth of 1.16 eV below the conduction-band bottom. The density of defect states at the Fermi level is 2.7 × 1016 cm2 eV–1.

Sobre autores

P. Ivanov

Ioffe Physical–Technical Institute

Autor responsável pela correspondência
Email: Pavel.Ivanov@mail.ioffe.ru
Rússia, St. Petersburg, 194021

M. Kudoyarov

Ioffe Physical–Technical Institute

Email: Pavel.Ivanov@mail.ioffe.ru
Rússia, St. Petersburg, 194021

M. Kozlovski

Ioffe Physical–Technical Institute

Email: Pavel.Ivanov@mail.ioffe.ru
Rússia, St. Petersburg, 194021

A. Potapov

Ioffe Physical–Technical Institute

Email: Pavel.Ivanov@mail.ioffe.ru
Rússia, St. Petersburg, 194021

T. Samsonova

Ioffe Physical–Technical Institute

Email: Pavel.Ivanov@mail.ioffe.ru
Rússia, St. Petersburg, 194021

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