On a New Mechanism for the Realization of Ohmic Contacts
- Authors: Sachenko A.V.1, Belyaev A.E.1, Konakova R.V.1
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Affiliations:
- Lashkaryov Institute of Semiconductor Physics
- Issue: Vol 52, No 1 (2018)
- Pages: 131-135
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/202341
- DOI: https://doi.org/10.1134/S1063782618010190
- ID: 202341
Cite item
Abstract
Analysis of the contact-barrier height taking into account the distribution of surface states along coordinate x perpendicular to the insulator–semiconductor interface is performed for metal–semiconductor contacts with a dielectric gap. It is shown that taking into account the spatial dependence of the density of surface states at rather high semiconductor doping levels leads to a substantial decrease in the barrier height, which promotes the realization of ohmic contacts. It is established that the smaller the metal–semiconductor contact potential difference ϕms is, the stronger the effect of barrier-height lowering. If ϕms is negative, this effect can lead to potential sign reversal, i.e., to the realization of an enrichment layer in the space-charge region of the semiconductor even at a high density of surface states. This in turn promotes the manifestation of an anomalous dependence of the contact resistivity on temperature; the resistivity increases with an increase in temperature.
About the authors
A. V. Sachenko
Lashkaryov Institute of Semiconductor Physics
Author for correspondence.
Email: sach@isp.kiev.ua
Ukraine, Kyiv, 03028
A. E. Belyaev
Lashkaryov Institute of Semiconductor Physics
Email: sach@isp.kiev.ua
Ukraine, Kyiv, 03028
R. V. Konakova
Lashkaryov Institute of Semiconductor Physics
Email: sach@isp.kiev.ua
Ukraine, Kyiv, 03028