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Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate


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Abstract

The structural and optical properties of a metamorphic GaAsSb bulk layer grown on a GaAs substrate are studied. As the excitation power density (at a wavelength of 0.65 μm) reaches 9 kW cm−2 at liquid-nitrogen temperature and 230 kW cm−2 at room temperature, a superluminescence signal is observed at wave-lengths of 0.943 and 0.992 μm, respectively.

About the authors

V. Ya. Aleshkin

Institute for Physics of Microstructures; Lobachevsky Nizhny Novgorod State University

Email: sanya@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950

A. A. Dubinov

Institute for Physics of Microstructures; Lobachevsky Nizhny Novgorod State University

Author for correspondence.
Email: sanya@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950

K. E. Kudryavtsev

Institute for Physics of Microstructures; Lobachevsky Nizhny Novgorod State University

Email: sanya@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950

P. A. Yunin

Institute for Physics of Microstructures; Lobachevsky Nizhny Novgorod State University

Email: sanya@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950

M. N. Drozdov

Institute for Physics of Microstructures; Lobachevsky Nizhny Novgorod State University

Email: sanya@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950

O. V. Vikhrova

Physical–Technical Research Institute

Email: sanya@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950

S. M. Nekorkin

Physical–Technical Research Institute

Email: sanya@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950

B. N. Zvonkov

Physical–Technical Research Institute

Email: sanya@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950

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