Physical properties of metal–insulator–semiconductor structures based on  n -GaAs with InAs quantum dots deposited onto the surface of an  n -GaAs layer

S. V. Tikhov; O. N. Gorshkov; M. N. Koryazhkina; A. P. Kasatkin; I. N. Antonov; O. V. Vihrova; A. I. Morozov

doi:10.1134/S1063782616120228

Physical properties of metal–insulator–semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer

Authors: Tikhov S.V.¹, Gorshkov O.N.¹, Koryazhkina M.N.¹, Kasatkin A.P.¹, Antonov I.N.¹, Vihrova O.V.¹, Morozov A.I.¹
Affiliations:
1. Lobachevsky State University of Nizhny Novgorod (NNSU)
Issue: Vol 50, No 12 (2016)
Pages: 1589-1594
Section: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
URL: https://journals.rcsi.science/1063-7826/article/view/198797
DOI: https://doi.org/10.1134/S1063782616120228
ID: 198797

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Abstract

The properties of metal–insulator–semiconductor (MIS) structures based on n-GaAs in which silicon oxide and yttria-stabilized zirconia and hafnia are used as the insulator containing InAs quantum dots, which are embedded at the insulator/n-GaAs interface, are investigated. The structures manifest the resistive switching and synaptic behavior.