Email this article On the growth, structure, and surface morphology of epitaxial CdTe films
- Authors: Nuriyev I.R.1, Mehrabova M.A.2, Nazarov A.M.1, Sadigov R.M.1, Hasanov N.G.3
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Affiliations:
- Abdullayev Institute of Physics
- Institute of Radiation Problems
- Baku State University
- Issue: Vol 51, No 1 (2017)
- Pages: 34-37
- Section: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/199293
- DOI: https://doi.org/10.1134/S1063782617010183
- ID: 199293
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Abstract
The structure and surface morphology of epitaxial CdTe films grown on glassy substrates with and without compensation with an additional Te vapor source during growth are studied. The optimal conditions of the production of structurally perfect epitaxial films with a pure smooth surface with no inclusions of another phase (Tso = 1000–1100 K, Tsu = 570–670 K) are determined. It is established that, on glassy substrates, the epitaxial films grow via the (111) plane of the face-centered cubic (fcc) lattice with the parameter a = 6.481 Å. By varying the temperature of the main and compensating sources, CdTe films with n- and p-type conductivity are produced.
About the authors
I. R. Nuriyev
Abdullayev Institute of Physics
Email: m.mehrabova@science.az
Azerbaijan, Baku, Az-1143
M. A. Mehrabova
Institute of Radiation Problems
Author for correspondence.
Email: m.mehrabova@science.az
Azerbaijan, Baku, Az-1143
A. M. Nazarov
Abdullayev Institute of Physics
Email: m.mehrabova@science.az
Azerbaijan, Baku, Az-1143
R. M. Sadigov
Abdullayev Institute of Physics
Email: m.mehrabova@science.az
Azerbaijan, Baku, Az-1143
N. G. Hasanov
Baku State University
Email: m.mehrabova@science.az
Azerbaijan, Baku, Az-1143
