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Vol 53, No 16 (2019)
Optical Properties of Short-Period InAs/GaSb Superlattices Grown by MOCVD
Danilov L.V., Levin R.V., Nevedomskyi V.N., Pushnyi B.V.
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(Eng)
Vol 53, No 9 (2019)
Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al2O3 Substrate
Sushkov A.A., Pavlov D.A., Shengurov V.G., Denisov S.A., Chalkov V.Y., Baidus N.V., Rykov A.V., Kryukov R.N.
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(Eng)
Vol 53, No 15 (2019)
Influence of Holes Capture Efficiency on Photoluminescence Temperature Dependence of n-AlGaAs/GaAs Quantum-Well Structures
Yaremenko N.G., Strakhov V.A., Karachevtseva M.V.
PDF
(Eng)
Vol 53, No 9 (2019)
On the Combined Application of Raman Spectroscopy and Photoluminescence Spectroscopy for the Diagnostics of Multilayer Heterostructures
Plankina S.M., Vikhrova O.V., Zvonkov B.N., Zubkov S.Y., Kriukov R.N., Nezhdanov A.V., Pavlov D.A., Pashen’kin I.Y., Sushkov A.A.
PDF
(Eng)
Vol 53, No 14 (2019)
Photoluminescence and Transmission Electron Microscopy Methods for Characterization of Super-Multiperiod A3B5 Quantum Well Structures
Goray L.I., Pirogov E.V., Nikitina E.V., Ubyivovk E.V., Gerchikov L.G., Ipatov A.N., Dashkov A.S., Sobolev M.S., Ilkiv I.V., Bouravlev A.D.
PDF
(Eng)
Vol 53, No 9 (2019)
Spectra of Double Acceptors in Layers of Barriers and Quantum Wells of HgTe/CdHgTe Heterostructures
Kozlov D.V., Rumyantsev V.V., Morozov S.V.
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(Eng)
Vol 53, No 11 (2019)
Time-Resolved Photoluminescence of InGaAs Nanostructures Different in Quantum Dimensionality
Nadtochiy A.M., Mintairov S.A., Kalyuzhnyy N.A., Maximov M.V., Sannikov D.A., Yagafarov T.F., Zhukov A.E.
PDF
(Eng)
Vol 53, No 9 (2019)
GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates
Abramkin D.S., Petrushkov M.O., Putyato M.A., Semyagin B.R., Emelyanov E.A., Preobrazhenskii V.V., Gutakovskii A.K., Shamirzaev T.S.
PDF
(Eng)
Vol 53, No 11 (2019)
Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions
Cherkova S.G., Skuratov V.A., Volodin V.A.
PDF
(Eng)
Vol 53, No 8 (2019)
On the Synthesis and Photoluminescence and Cathodoluminescence Properties of CdSe, CdTe, PbS, InSb, and GaAs Colloidal Quantum Dots
Zhukov N.D., Kryl’skiy D.V., Shishkin M.I., Khazanov A.A.
PDF
(Eng)
Vol 53, No 10 (2019)
Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers
Andreev B.A., Lobanov D.N., Krasil’nikova L.V., Bushuykin P.A., Yablonskiy A.N., Novikov A.V., Davydov V.Y., Yunin P.A., Kalinnikov M.I., Skorohodov E.V., Krasil’nik Z.F.
PDF
(Eng)
Vol 50, No 2 (2016)
Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates
Galiev G.B., Klimov E.A., Grekhov M.M., Pushkarev S.S., Lavrukhin D.V., Maltsev P.P.
PDF
(Eng)
Vol 53, No 10 (2019)
Locally Strained Ge/SOI Structures with an Improved Heat Sink as an Active Medium for Silicon Optoelectronics
Yurasov D.V., Baidakova N.A., Verbus V.A., Gusev N.S., Mashin A.I., Morozova E.E., Nezhdanov A.V., Novikov A.V., Skorohodov E.V., Shengurov D.V., Yablonskiy A.N.
PDF
(Eng)
Vol 50, No 2 (2016)
Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures
Aleksandrov I.A., Zhuravlev K.S., Mansurov V.G.
PDF
(Eng)
Vol 53, No 16 (2019)
Kinetics of Photoluminescence Decay of Colloidal Quantum Dots: Reversible Trapping of Photogenerated Charge Carriers
Bodunov E.N., Simões Gamboa A.L.
PDF
(Eng)
Vol 53, No 9 (2019)
Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers
Prokhorov D.S., Shengurov V.G., Denisov S.A., Filatov D.O., Zdoroveishev A.V., Chalkov V.Y., Zaitsev A.V., Ved’ M.V., Dorokhin M.V., Baidakova N.A.
PDF
(Eng)
Vol 50, No 2 (2016)
Photoluminescence properties of thallium-containing GeSe2 and GeSe3 vitreous semiconductors
Babaev A.A.
PDF
(Eng)
1 - 17 of 17 Items

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