Effect of H+ implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region
- Authors: Klyui N.I.1,2, Lozinskii V.B.1,2, Liptuga A.I.2, Dikusha V.N.2, Oksanych A.P.3, Kogdas’ M.G.3, Perekhrest A.L.3, Pritchin S.E.3
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Affiliations:
- College of Physics
- Lashkaryov Institute of Semiconductor Physics
- Kremenchug National University
- Issue: Vol 51, No 3 (2017)
- Pages: 305-309
- Section: Spectroscopy, Interaction with Radiation
- URL: https://journals.rcsi.science/1063-7826/article/view/199555
- DOI: https://doi.org/10.1134/S1063782617030113
- ID: 199555
Cite item
Abstract
The optical properties of semi-insulating GaAs crystals subjected to multienergy hydrogen-ion implantation and treatment in a high-frequency electromagnetic field are studied in the infrared spectral region. It is established that such combined treatment provides a means for substantially increasing the transmittance of GaAs crystals to values characteristic of crystals of high optical quality. On the basis of analysis of the infrared transmittance and reflectance data, Raman spectroscopy data, and atomic-force microscopy data on the surface morphology of the crystals, a physical model is proposed to interpret the effects experimentally observed in the crystals. The model takes into account the interaction of radiation defects with the initial structural defects in the crystals as well as the effect of compensation of defect centers by hydrogen during high-frequency treatment.
About the authors
N. I. Klyui
College of Physics; Lashkaryov Institute of Semiconductor Physics
Email: lvb@isp.kiev.ua
China, Changchun, 130012; Kyiv, 03028
V. B. Lozinskii
College of Physics; Lashkaryov Institute of Semiconductor Physics
Author for correspondence.
Email: lvb@isp.kiev.ua
China, Changchun, 130012; Kyiv, 03028
A. I. Liptuga
Lashkaryov Institute of Semiconductor Physics
Email: lvb@isp.kiev.ua
Ukraine, Kyiv, 03028
V. N. Dikusha
Lashkaryov Institute of Semiconductor Physics
Email: lvb@isp.kiev.ua
Ukraine, Kyiv, 03028
A. P. Oksanych
Kremenchug National University
Email: lvb@isp.kiev.ua
Ukraine, Kremenchug, 39600
M. G. Kogdas’
Kremenchug National University
Email: lvb@isp.kiev.ua
Ukraine, Kremenchug, 39600
A. L. Perekhrest
Kremenchug National University
Email: lvb@isp.kiev.ua
Ukraine, Kremenchug, 39600
S. E. Pritchin
Kremenchug National University
Email: lvb@isp.kiev.ua
Ukraine, Kremenchug, 39600