Simulation of the β-voltaic effect in silicon pin structures irradiated with electrons from a nickel-63 β source
- Authors: Nagornov Y.S.1, Murashev V.N.2
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Affiliations:
- Togliatti State University
- National Research Technological University “MISiS”
- Issue: Vol 50, No 1 (2016)
- Pages: 16-21
- Section: Review
- URL: https://journals.rcsi.science/1063-7826/article/view/196676
- DOI: https://doi.org/10.1134/S1063782616010188
- ID: 196676
Cite item
Abstract
The prospects of β voltaics as electric-power sources for semiconductor circuits are considered. Experimental studies show that charging of the surface and a decrease in the electrovoltaic power are important. Simulation of the β-voltaic effect induced by electrons from a nickel-63 source on silicon pin structures is performed; it is shown that the coefficient of the collection of generated charge carriers can be as high as 13%. The dose dependences of the performance efficiency of silicon β-voltaic structures are determined for the case of irradiation with α particles and γ-ray photons; it is shown that 1.3 × 1014 and 1020 cm–2, respectively, are the threshold doses, above which a rapid decrease in efficiency occurs. The optimal parameters of microchannel structures in β-voltaic electronics, in which the width of the channels and the distance between them correspond to 3 and 10 μm, are determined.
About the authors
Yu. S. Nagornov
Togliatti State University
Author for correspondence.
Email: Nagornov.Yuri@gmail.com
Russian Federation, Togliatti, 445667
V. N. Murashev
National Research Technological University “MISiS”
Email: Nagornov.Yuri@gmail.com
Russian Federation, Moscow, 119991