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Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam
Sakharov A.V., Kaliteevskii M.A., Voznyuk G.V., Levitskii I.V., Mitrofanov M.I., Tsatsulnikov A.F., Lundin W.V., Rodin S.N., Usov S.O., Evtikhiev V.P.
Investigation of the Initial Silicon-on-Sapphire Layer Formed by CVD Techniques
Fedotov S.D., Sokolov E.M., Statsenko V.N., Romashkin A.V., Timoshenkov S.P.
Influence of Heat Treatments on the Properties of ZnO Nanorods Prepared by Hydrothermal Synthesis
Hyunggun Ma
The Effect of Various Annealing Cooling Rates on Electrical and Morphological Properties of TiO2 Thin Films
Asalzadeh S., Yasserian K.
Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching
Levitskii Y.V., Mitrofanov M.I., Voznyuk G.V., Nikolayev D.N., Mizerov M.N., Evtikhiev V.P.
Optical and structural properties of Cu2ZnSnS4 thin films obtained by pulsed laser deposition in a H2S atmosphere with subsequent annealing in a N2 atmosphere
Teterina G.D., Nevolin V.N., Sipaylo I.P., Medvedeva S.S., Teterin P.E.
Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride
Korolev D.S., Mikhaylov A.N., Belov A.I., Vasiliev V.K., Guseinov D.V., Okulich E.V., Shemukhin A.A., Surodin S.I., Nikolitchev D.E., Nezhdanov A.V., Pirogov A.V., Pavlov D.A., Tetelbaum D.I.
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