Отправить статью по E-mail Effect of the Electric Mode and γ Irradiation on Surface-Defect Formation at the Si–SiO2 Interface in a MOS Transistor
- Авторы: Kulikov N.A.1, Popov V.D.1
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Учреждения:
- National Research Nuclear University “Moscow Engineering Physics Institute”
- Выпуск: Том 53, № 1 (2019)
- Страницы: 110-113
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/205629
- DOI: https://doi.org/10.1134/S1063782619010123
- ID: 205629
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Аннотация
The results of experimental investigation into surface-defect formation under the effect of gamma-radiation with a dose rate P = 0.1 rad(Si)/s on MOS (metal-oxide-semiconductor) transistors with the n-type channel in the passive and active modes are presented. Two stages of surface-defect formation are observed. A qualitative model is proposed to explain the effect of the the drain transistor voltage on the defect formation process.
Об авторах
N. Kulikov
National Research Nuclear University “Moscow Engineering Physics Institute”
Email: wdpopov@mail.ru
Россия, Moscow, 115409
V. Popov
National Research Nuclear University “Moscow Engineering Physics Institute”
Автор, ответственный за переписку.
Email: wdpopov@mail.ru
Россия, Moscow, 115409
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