Optical Properties and the Mechanism of the Formation of V 2 O 2  and V 3 O 2  Vacancy–Oxygen Complexes in Irradiated Silicon Crystals

E. A. Tolkacheva; V. P. Markevich; L. I. Murin

doi:10.1134/S1063782618090221

Optical Properties and the Mechanism of the Formation of V₂O₂ and V₃O₂ Vacancy–Oxygen Complexes in Irradiated Silicon Crystals

Authors: Tolkacheva E.A.¹, Markevich V.P.², Murin L.I.¹
Affiliations:
1. Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus
2. Photon Science Institute, School of Electrical and Electronic Engineering, University of Manchester
Issue: Vol 52, No 9 (2018)
Pages: 1097-1103
Section: Spectroscopy, Interaction with Radiation
URL: https://journals.rcsi.science/1063-7826/article/view/203955
DOI: https://doi.org/10.1134/S1063782618090221
ID: 203955

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Abstract
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Abstract

The processes of the formation and annealing of V_nO_m (n, m ≥ 2) vacancy–oxygen complexes in Czochralski silicon crystals irradiated with fast electrons and reactor neutrons have been studied by infrared absorption Fourier spectroscopy. A number of arguments are presented in favor of identification of absorption bands at 829.3 and 844.2 cm^–1 as being related to local vibrational modes of V₂O₂ and V₃O₂ complexes, respectively.

Keywords

Vacancy-oxygen Complexes, Local Vibrational Modes (LVMs), Fast Electrons, Interstitial Oxygen Atoms, DLTS Data

About the authors

E. A. Tolkacheva

Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus

Author for correspondence.
Email: talkachova@physics.by
Belarus, Minsk, 220072

V. P. Markevich

Photon Science Institute, School of Electrical and Electronic Engineering, University of Manchester

Email: talkachova@physics.by
United Kingdom, Manchester, M13 9PL

L. I. Murin