Email this article Electromechanical Switch Based on InxGa1 –xAs Nanowires
- Authors: Alekseev P.A.1, Sharov V.A.1, Dunaevskiy M.S.1, Cirlin G.E.2,3, Reznik R.R.3, Berkovits V.L.1
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Affiliations:
- Ioffe Institute
- Academic University
- ITMO University
- Issue: Vol 52, No 14 (2018)
- Pages: 1833-1835
- Section: Nanostructure Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/205030
- DOI: https://doi.org/10.1134/S1063782618140026
- ID: 205030
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Abstract
Piezoresistance effect of the InxGa1 –xAs nanowires was studied by scanning probe microscopy. The effect was investigated by measuring of the I–V curves with simultaneous bending of the nanowire by the probe. A modulation of the conductivity of In0.85Ga0.15As NWs induced by a mechanical stress exceeding three orders of magnitude was observed. For the explanation a model based on the surface states is presented. Such an observation opens new ways for the design of electromechanical switches with record parameters.
About the authors
P. A. Alekseev
Ioffe Institute
Author for correspondence.
Email: npoxep@gmail.com
Russian Federation, St. Petersburg
V. A. Sharov
Ioffe Institute
Email: npoxep@gmail.com
Russian Federation, St. Petersburg
M. S. Dunaevskiy
Ioffe Institute
Email: npoxep@gmail.com
Russian Federation, St. Petersburg
G. E. Cirlin
Academic University; ITMO University
Email: npoxep@gmail.com
Russian Federation, St. Petersburg; St. Petersburg
R. R. Reznik
ITMO University
Email: npoxep@gmail.com
Russian Federation, St. Petersburg
V. L. Berkovits
Ioffe Institute
Email: npoxep@gmail.com
Russian Federation, St. Petersburg
