Optimization of the parameters of power sources excited by β-radiation

Abstract

The experimental results and calculations of the efficiency of the energy conversion of Ni-63 β-radiation sources to electricity using silicon p–i–n diodes are presented. All calculations are performed taking into account the energy distribution of β-electrons. An expression for the converter open-circuit voltage is derived taking into account the distribution of high-energy electrons in the space-charge region of the p–i–n diode. Ways of optimizing the converter parameters by improving the technology of diodes and optimizing the emitter active layer and i-region thicknesses of the semiconductor converter are shown. The distribution of the conversion losses to the source and radiation detector and the losses to high-energy electron entry into the semiconductor is calculated. Experimental values of the conversion efficiency of 0.4–0.7% are in good agreement with the calculated parameters.