Email this article Low-Temperature Ta/Al-Based Ohmic Contacts to AlGaN/GaN Heteroepitaxial Structures on Silicon Wafers
- Authors: Erofeev E.V.1, Fedin I.V.1, Fedina V.V.1, Fazleev A.P.2
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Affiliations:
- Research Institute of Electrical Communication Systems, Tomsk State University of Control Systems and Radioelectronics
- “Mikran” Research and Production Company
- Issue: Vol 53, No 2 (2019)
- Pages: 237-240
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/205754
- DOI: https://doi.org/10.1134/S1063782619020064
- ID: 205754
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Abstract
The formation features of a low-temperature Ta/Al-based ohmic contact to Al0.25Ga0.75N/GaN heteroepitaxial structures on silicon substrates are studied. The fabricated ohmic contacts based on Ta/Al/Ti (10/300/20 nm) compositions have a low contact resistance (0.4 Ω mm) and smooth surface morphology of the contact area and its edge after 60-s annealing at T = 550°C in a nitrogen atmosphere.
About the authors
E. V. Erofeev
Research Institute of Electrical Communication Systems, Tomsk State University of Control Systems and Radioelectronics
Author for correspondence.
Email: erofeev@sibmail.com
Russian Federation, Tomsk, 634034
I. V. Fedin
Research Institute of Electrical Communication Systems, Tomsk State University of Control Systems and Radioelectronics
Email: erofeev@sibmail.com
Russian Federation, Tomsk, 634034
V. V. Fedina
Research Institute of Electrical Communication Systems, Tomsk State University of Control Systems and Radioelectronics
Email: erofeev@sibmail.com
Russian Federation, Tomsk, 634034
A. P. Fazleev
“Mikran” Research and Production Company
Email: erofeev@sibmail.com
Russian Federation, Tomsk, 634045
