Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures
- Authors: Pavlikov A.V.1, Latukhina N.V.2, Chepurnov V.I.2, Timoshenko V.Y.1,3
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Affiliations:
- Faculty of Physics
- Samara National Researh University
- Tomsk State University (National Research University)
- Issue: Vol 51, No 3 (2017)
- Pages: 402-406
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/199670
- DOI: https://doi.org/10.1134/S106378261703023X
- ID: 199670
Cite item
Abstract
Silicon-carbide (SiC) nanowire structures 40–50 nm in diameter are produced by the high-temperature carbonization of porous silicon and silicon nanowires. The SiC nanowires are studied by scanning electron microscopy, X-ray diffraction analysis, Raman spectroscopy, and infrared reflectance spectroscopy. The X-ray structural and Raman data suggest that the cubic 3C-SiC polytype is dominant in the samples under study. The shape of the infrared reflectance spectrum in the region of the reststrahlen band 800–900 cm–1 is indicative of the presence of free charge carriers. The possibility of using SiC nanowires in microelectronic, photonic, and gas-sensing devices is discussed.
About the authors
A. V. Pavlikov
Faculty of Physics
Author for correspondence.
Email: pavlikov@physics.msu.ru
Russian Federation, Moscow, 119991
N. V. Latukhina
Samara National Researh University
Email: pavlikov@physics.msu.ru
Russian Federation, Samara, 443086
V. I. Chepurnov
Samara National Researh University
Email: pavlikov@physics.msu.ru
Russian Federation, Samara, 443086
V. Yu. Timoshenko
Faculty of Physics; Tomsk State University (National Research University)
Email: pavlikov@physics.msu.ru
Russian Federation, Moscow, 119991; Tomsk, 634050