Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures

A. L. Zakgeim; N. D. Il’inskaya; S. A. Karandashev; A. A. Lavrov; B. A. Matveev; M. A. Remennyy; N. M. Stus’; A. A. Usikova; A. E. Cherniakov

doi:10.1134/S1063782617020269

Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures

Authors: Zakgeim A.L.¹, Il’inskaya N.D.², Karandashev S.A.², Lavrov A.A.²^,3, Matveev B.A.², Remennyy M.A.², Stus’ N.M.², Usikova A.A.², Cherniakov A.E.¹
Affiliations:
1. Scientific and Technological Center for Microelectronics
2. Ioffe Institute
3. Open Company “IoffeLED”
Issue: Vol 51, No 2 (2017)
Pages: 260-266
Section: Physics of Semiconductor Devices
URL: https://journals.rcsi.science/1063-7826/article/view/199514
DOI: https://doi.org/10.1134/S1063782617020269
ID: 199514

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Abstract

The spatial distribution of equilibrium and nonequilibrium (including luminescent) IR (infrared) radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures (λ_max = 3.4 μm) is measured and analyzed; the structural features of the photodiodes, including the reflective properties of the ohmic contacts, are taken into account. Optical area enhancement due to multiple internal reflection in photodiodes with different geometric characteristics is estimated.