Effect of Pulsed Gamma-Neutron Irradiation on the Photosensitivity of Si-Based Photodiodes with GeSi Nanoislands and Ge Epitaxial Layers
- Authors: Ivanova M.M.1,2, Kachemtsev A.N.1, Mikhaylov A.N.2, Filatov D.O.2, Gorshkov A.P.2, Volkova N.S.2, Chalkov V.Y.2, Shengurov V.G.2
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Affiliations:
- Sedakov Research Institute of Measuring Systems
- Lobachevsky State University of Nizhny Novgorod
- Issue: Vol 52, No 6 (2018)
- Pages: 797-801
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/203551
- DOI: https://doi.org/10.1134/S1063782618060064
- ID: 203551
Cite item
Abstract
A comparative study of the effect of pulsed γ-neutron irradiation on the photosensitivity spectra of Si p–n photodiodes with active layers based on self-assembled GeSi nanoisland arrays and Ge epitaxial layers is performed. The irradiation of photodiodes with GeSi nanoislands is found to not lead to photosensitivity degradation in the spectral region of interband optical absorption in nanoislands (wavelength range of 1.1–1.7 μm). At the same time, a steady decrease in the intrinsic photosensitivity of Si and the photosensitivity of photodiodes based on Ge epitaxial layers with an increase in irradiation dose is observed. This effect is attributed to the accumulation of radiation-induced defects in the Si matrix and deep in Ge epitaxial layers, respectively.
About the authors
M. M. Ivanova
Sedakov Research Institute of Measuring Systems; Lobachevsky State University of Nizhny Novgorod
Email: shengurov@phys.unn.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
A. N. Kachemtsev
Sedakov Research Institute of Measuring Systems
Email: shengurov@phys.unn.ru
Russian Federation, Nizhny Novgorod, 603950
A. N. Mikhaylov
Lobachevsky State University of Nizhny Novgorod
Email: shengurov@phys.unn.ru
Russian Federation, Nizhny Novgorod, 603950
D. O. Filatov
Lobachevsky State University of Nizhny Novgorod
Email: shengurov@phys.unn.ru
Russian Federation, Nizhny Novgorod, 603950
A. P. Gorshkov
Lobachevsky State University of Nizhny Novgorod
Email: shengurov@phys.unn.ru
Russian Federation, Nizhny Novgorod, 603950
N. S. Volkova
Lobachevsky State University of Nizhny Novgorod
Email: shengurov@phys.unn.ru
Russian Federation, Nizhny Novgorod, 603950
V. Yu. Chalkov
Lobachevsky State University of Nizhny Novgorod
Email: shengurov@phys.unn.ru
Russian Federation, Nizhny Novgorod, 603950
V. G. Shengurov
Lobachevsky State University of Nizhny Novgorod
Author for correspondence.
Email: shengurov@phys.unn.ru
Russian Federation, Nizhny Novgorod, 603950