Email this article Field Effect in PbSnTe:In Films with Low Conductivity in the Mode of Injection from Contacts and Space-Charge Limitation of the Current
- Authors: Akimov A.N.1, Klimov A.E.1,2, Epov V.S.1
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State Technical University
- Issue: Vol 52, No 12 (2018)
- Pages: 1505-1510
- Section: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204635
- DOI: https://doi.org/10.1134/S1063782618120035
- ID: 204635
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Abstract
At T = 4.2 K, a strong change (up to 4 times) in the space-charge-limited current (SCLC) is observed for the first time at samples based on semi-insulating PbSnTe:In films grown by molecular-beam epitaxy on BaF2(111) substrates. The obtained results agree with experiments on the effect of treatment of the surface of PbSnTe:In films on the space-charge-limited current with a variation in the current to 103 times or more. At a qualitative level, the model is considered which assumes the substantial contribution of localized surface states to space charge formed in the mode of space-charge-limited current due to the injection of charge carriers from contacts.
About the authors
A. N. Akimov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: klimov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
A. E. Klimov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State Technical University
Author for correspondence.
Email: klimov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630073
V. S. Epov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: klimov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
