Transport properties of heteroepitaxial films based on bismuth telluride in strong magnetic fields
- Authors: Lukyanova L.N.1, Boikov Y.A.1, Usov O.A.1, Danilov V.A.1, Volkov M.P.1
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Affiliations:
- Ioffe Institute
- Issue: Vol 51, No 7 (2017)
- Pages: 843-846
- Section: XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/200150
- DOI: https://doi.org/10.1134/S1063782617070259
- ID: 200150
Cite item
Abstract
The temperature and magnetic-field dependences of the galvanomagnetic properties of n-Bi2Te3 heteroepitaxial films in magnetic fields to 14 T at low temperatures are studied. It is shown that steps in the magnetic-field dependences of the quantum Hall effect and the plateau in the temperature dependences of the magnetoresistance of films are caused by topological surface states of Dirac fermions.
About the authors
L. N. Lukyanova
Ioffe Institute
Author for correspondence.
Email: lidia.lukyanova@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
Yu. A. Boikov
Ioffe Institute
Email: lidia.lukyanova@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
O. A. Usov
Ioffe Institute
Email: lidia.lukyanova@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. A. Danilov
Ioffe Institute
Email: lidia.lukyanova@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. P. Volkov
Ioffe Institute
Email: lidia.lukyanova@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021