GaSb laser-power (λ = 1550 nm) converters: Fabrication method and characteristics
- Authors: Khvostikov V.P.1, Sorokina S.V.1, Khvostikova O.A.1, Levin R.V.1, Pushnyi B.V.1, Timoshina N.K.1, Andreev V.M.1
-
Affiliations:
- Ioffe Physical–Technical Institute
- Issue: Vol 50, No 10 (2016)
- Pages: 1338-1343
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/198058
- DOI: https://doi.org/10.1134/S1063782616100146
- ID: 198058
Cite item
Abstract
Photovoltaic converters of laser light with a wavelength of λ = 1550 nm are developed using liquidphase epitaxy (LPE), metal-organic chemical-vapor deposition (MOCVD), and diffusion from the gas phase into the n-GaSb substrate. Photocells with an area of S of 4, 12.2, and 100 mm2 are fabricated and tested. The characteristics of the samples produced by different methods are compared. The monochromatic efficiency is found to be 38.7% for the best converters (with S = 12.2 mm2) at a laser power of 1.4 W.
About the authors
V. P. Khvostikov
Ioffe Physical–Technical Institute
Author for correspondence.
Email: vlkhv@scell.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. V. Sorokina
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
Russian Federation, St. Petersburg, 194021
O. A. Khvostikova
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
Russian Federation, St. Petersburg, 194021
R. V. Levin
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
Russian Federation, St. Petersburg, 194021
B. V. Pushnyi
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. Kh. Timoshina
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. M. Andreev
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
Russian Federation, St. Petersburg, 194021