Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs
- Authors: Tsatsulnikov A.F.1,2, Lundin W.V.1,2, Sakharov A.V.1,2, Zavarin E.E.1,2, Usov S.O.1,2, Nikolaev A.E.1,2, Yagovkina M.A.1, Ustinov V.M.1,2, Cherkashin N.A.3
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Affiliations:
- Ioffe Physical–Technical Institute
- Submicron Heterostructures for Microelectronics, Research and Engineering Center
- CEMES–CNRS—Université de Toulouse
- Issue: Vol 50, No 9 (2016)
- Pages: 1241-1247
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/197932
- DOI: https://doi.org/10.1134/S1063782616090232
- ID: 197932
Cite item
Abstract
The epitaxial growth of InAlN layers and GaN/AlN/InAlN heterostructures for HEMTs in growth systems with horizontal reactors of the sizes 1 × 2", 3 × 2", and 6 × 2" is investigated. Studies of the structural properties of the grown InAlN layers and electrophysical parameters of the GaN/AlN/InAlN heterostructures show that the optimal quality of epitaxial growth is attained upon a compromise between the growth conditions for InGaN and AlGaN. A comparison of the epitaxial growth in different reactors shows that optimal conditions are realized in small-scale reactors which make possible the suppression of parasitic reactions in the gas phase. In addition, the size of the reactor should be sufficient to provide highly homogeneous heterostructure parameters over area for the subsequent fabrication of devices. The optimal compositions and thicknesses of the InAlN layer for attaining the highest conductance in GaN/AlN/InAlN transistor heterostructures.
About the authors
A. F. Tsatsulnikov
Ioffe Physical–Technical Institute; Submicron Heterostructures for Microelectronics, Research and Engineering Center
Author for correspondence.
Email: andrew@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021
W. V. Lundin
Ioffe Physical–Technical Institute; Submicron Heterostructures for Microelectronics, Research and Engineering Center
Email: andrew@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021
A. V. Sakharov
Ioffe Physical–Technical Institute; Submicron Heterostructures for Microelectronics, Research and Engineering Center
Email: andrew@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021
E. E. Zavarin
Ioffe Physical–Technical Institute; Submicron Heterostructures for Microelectronics, Research and Engineering Center
Email: andrew@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021
S. O. Usov
Ioffe Physical–Technical Institute; Submicron Heterostructures for Microelectronics, Research and Engineering Center
Email: andrew@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021
A. E. Nikolaev
Ioffe Physical–Technical Institute; Submicron Heterostructures for Microelectronics, Research and Engineering Center
Email: andrew@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021
M. A. Yagovkina
Ioffe Physical–Technical Institute
Email: andrew@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. M. Ustinov
Ioffe Physical–Technical Institute; Submicron Heterostructures for Microelectronics, Research and Engineering Center
Email: andrew@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021
N. A. Cherkashin
CEMES–CNRS—Université de Toulouse
Email: andrew@beam.ioffe.ru
France, Toulouse