New mechanism of semiconductor polarization at the interface with an organic insulator

Abstract

A semiconductor—organic-insulator system with spatially distributed charge is created with a uniquely low density of fast surface states (N_ss) at the interface. A system with N_ss ≈ 5 × 10¹⁰ cm^–2 is obtained for the example of n-Ge and the physical characteristics of the interface are measured for this system with liquid and metal field electrodes. For a system with an organic insulator, the range of variation of the surface potential from enrichment of the space-charge region of the semiconductor to the inversion state is first obtained without changing the mechanism of interaction between the adsorbed layer and the semiconductor surface. The effect of enhanced polarization of the space-charge region of the semiconductor occurs due to a change in the spatial structure of mobile charge in the organic dielectric layer. The system developed in the study opens up technological opportunities for the formation of a new generation of electronic devices based on organic film structures and for experimental modeling of the electronic properties of biological membranes.