Email this article On Recombination Processes in CdS–PbS Films
- Authors: Rokakh A.G.1, Shishkin M.I.1, Atkin V.S.1
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Affiliations:
- Saratov State University
- Issue: Vol 52, No 8 (2018)
- Pages: 986-992
- Section: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/203808
- DOI: https://doi.org/10.1134/S1063782618080171
- ID: 203808
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Abstract
The transverse and longitudinal photoconductivity, photoluminescence, and cathodoluminescence of sublimated (CdS)0.9–(PbS)0.1 films at room temperature and upon cooling are studied. The role of inclusions of the narrow-gap phase in the processes is shown. The films are excited over the entire active surface and pointwise (within one crystallite). The surface recombination rate and the lifetime of majority charge carriers at different generation rates and characters of excitation are estimated. A comparative table of recombination parameters of CdS and CdS–PbS films is presented.
About the authors
A. G. Rokakh
Saratov State University
Email: shishkin1mikhail@gmail.com
Russian Federation, Saratov, 410012
M. I. Shishkin
Saratov State University
Author for correspondence.
Email: shishkin1mikhail@gmail.com
Russian Federation, Saratov, 410012
V. S. Atkin
Saratov State University
Email: shishkin1mikhail@gmail.com
Russian Federation, Saratov, 410012
