Email this article Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon
- Authors: Cirlin G.E.1,2,3, Shtrom I.V.1,2,4, Reznik R.R.1,5, Samsonenko Y.B.1,2, Khrebtov A.I.1, Bouravleuv A.D.1,2,4, Soshnikov I.P.1,2,4,6
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Affiliations:
- St. Petersburg Academic University, Russian Academy of Sciences
- Institute for Analytical Instrumentation
- ITMO University
- Ioffe Physical–Technical Institute
- Peter the Great St. Petersburg Polytechnic University
- St. Petersburg Electrotechnical University LETI
- Issue: Vol 50, No 11 (2016)
- Pages: 1421-1424
- Section: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198233
- DOI: https://doi.org/10.1134/S1063782616110257
- ID: 198233
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Abstract
Data on the growth features and physical properties of GaAs inserts embedded in AlGaAs nanowires grown on Si(111) substrates by Au-assisted molecular beam epitaxy are presented. It is shown that by varying the growth parameters it is possible to form structures like quantum dots emitting in a wide wavelength range for both active and barrier regions. The technology proposed opens up new possibilities for the integration of direct-band III–V materials on silicon.
About the authors
G. E. Cirlin
St. Petersburg Academic University, Russian Academy of Sciences; Institute for Analytical Instrumentation; ITMO University
Author for correspondence.
Email: cirlin@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 197101
I. V. Shtrom
St. Petersburg Academic University, Russian Academy of Sciences; Institute for Analytical Instrumentation; Ioffe Physical–Technical Institute
Email: cirlin@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 194021
R. R. Reznik
St. Petersburg Academic University, Russian Academy of Sciences; Peter the Great St. Petersburg Polytechnic University
Email: cirlin@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 195251
Yu. B. Samsonenko
St. Petersburg Academic University, Russian Academy of Sciences; Institute for Analytical Instrumentation
Email: cirlin@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 190103
A. I. Khrebtov
St. Petersburg Academic University, Russian Academy of Sciences
Email: cirlin@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. D. Bouravleuv
St. Petersburg Academic University, Russian Academy of Sciences; Institute for Analytical Instrumentation; Ioffe Physical–Technical Institute
Email: cirlin@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 194021
I. P. Soshnikov
St. Petersburg Academic University, Russian Academy of Sciences; Institute for Analytical Instrumentation; Ioffe Physical–Technical Institute; St. Petersburg Electrotechnical University LETI
Email: cirlin@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 194021; St. Petersburg, 197376
