Enviar artigo por via de e-mail Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon
- Autores: Cirlin G.E.1,2,3, Shtrom I.V.1,2,4, Reznik R.R.1,5, Samsonenko Y.B.1,2, Khrebtov A.I.1, Bouravleuv A.D.1,2,4, Soshnikov I.P.1,2,4,6
-
Afiliações:
- St. Petersburg Academic University, Russian Academy of Sciences
- Institute for Analytical Instrumentation
- ITMO University
- Ioffe Physical–Technical Institute
- Peter the Great St. Petersburg Polytechnic University
- St. Petersburg Electrotechnical University LETI
- Edição: Volume 50, Nº 11 (2016)
- Páginas: 1421-1424
- Seção: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198233
- DOI: https://doi.org/10.1134/S1063782616110257
- ID: 198233
Citar
Acesso aberto
Acesso está concedido
Somente assinantes
Resumo
Data on the growth features and physical properties of GaAs inserts embedded in AlGaAs nanowires grown on Si(111) substrates by Au-assisted molecular beam epitaxy are presented. It is shown that by varying the growth parameters it is possible to form structures like quantum dots emitting in a wide wavelength range for both active and barrier regions. The technology proposed opens up new possibilities for the integration of direct-band III–V materials on silicon.
Sobre autores
G. Cirlin
St. Petersburg Academic University, Russian Academy of Sciences; Institute for Analytical Instrumentation; ITMO University
Autor responsável pela correspondência
Email: cirlin@beam.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 197101
I. Shtrom
St. Petersburg Academic University, Russian Academy of Sciences; Institute for Analytical Instrumentation; Ioffe Physical–Technical Institute
Email: cirlin@beam.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 194021
R. Reznik
St. Petersburg Academic University, Russian Academy of Sciences; Peter the Great St. Petersburg Polytechnic University
Email: cirlin@beam.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 195251
Yu. Samsonenko
St. Petersburg Academic University, Russian Academy of Sciences; Institute for Analytical Instrumentation
Email: cirlin@beam.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 190103
A. Khrebtov
St. Petersburg Academic University, Russian Academy of Sciences
Email: cirlin@beam.ioffe.ru
Rússia, St. Petersburg, 194021
A. Bouravleuv
St. Petersburg Academic University, Russian Academy of Sciences; Institute for Analytical Instrumentation; Ioffe Physical–Technical Institute
Email: cirlin@beam.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 194021
I. Soshnikov
St. Petersburg Academic University, Russian Academy of Sciences; Institute for Analytical Instrumentation; Ioffe Physical–Technical Institute; St. Petersburg Electrotechnical University LETI
Email: cirlin@beam.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 194021; St. Petersburg, 197376
Arquivos suplementares
