Polarization of the induced THz emission of donors in silicon
- Authors: Kovalevsky K.A.1, Zhukavin R.K.1, Tsyplenkov V.V.1, Pavlov S.G.2, Hübers H.-.2,3, Abrosimov N.V.4, Shastin V.N.4
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Affiliations:
- Institute for Physics of Microstructures
- Humboldt University of Berlin
- Institute of Optical Sensor Systems DLR
- Leibniz Institute for Crystal Growth
- Issue: Vol 50, No 12 (2016)
- Pages: 1673-1677
- Section: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/199097
- DOI: https://doi.org/10.1134/S1063782616120101
- ID: 199097
Cite item
Abstract
The polarization of the terahertz (4.9–6.4 THz) stimulated emission of Group-V (Sb, P, As, Bi) donors in single-crystal silicon under pumping (photoionization) by a CO2 laser (photon energy 117 meV), depending on the uniaxial compressive deformation of the crystal along the [100] axis, is experimentally investigated. The influence of the field direction of the pump wave on its efficiency is discussed.
About the authors
K. A. Kovalevsky
Institute for Physics of Microstructures
Author for correspondence.
Email: atan4@yandex.ru
Russian Federation, Nizhny Novgorod, 603950
R. Kh. Zhukavin
Institute for Physics of Microstructures
Email: atan4@yandex.ru
Russian Federation, Nizhny Novgorod, 603950
V. V. Tsyplenkov
Institute for Physics of Microstructures
Email: atan4@yandex.ru
Russian Federation, Nizhny Novgorod, 603950
S. G. Pavlov
Humboldt University of Berlin
Email: atan4@yandex.ru
Germany, Berlin, 10099
H. -W. Hübers
Humboldt University of Berlin; Institute of Optical Sensor Systems DLR
Email: atan4@yandex.ru
Germany, Berlin, 10099; Berlin, 12489
N. V. Abrosimov
Leibniz Institute for Crystal Growth
Email: atan4@yandex.ru
Germany, Berlin, D-12489
V. N. Shastin
Leibniz Institute for Crystal Growth
Email: atan4@yandex.ru
Germany, Berlin, D-12489