Email this article MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer
- Authors: Alexeev P.A.1, Cirlin G.E.2,3,4,5, Reznik R.R.2, Kotlyar K.P.3, Ilkiv I.V.3, Soshnikov I.P.3,4,1, Lebedev S.P.1, Lebedev A.A.1, Kirilenko D.A.1
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Affiliations:
- Ioffe Institute
- ITMO University
- St. Petersburg Academic University, Russian Academy of Sciences
- Institute for Analytical Instrumentation, Russian Academy of Sciences
- Peter the Great St. Petersburg Polytechnic University
- Issue: Vol 52, No 11 (2018)
- Pages: 1428-1431
- Section: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204354
- DOI: https://doi.org/10.1134/S1063782618110210
- ID: 204354
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Abstract
The possibility in principle of the MBE (molecular-beam epitaxy) growth of GaP and InP nanowires on a SiC substrate with a graphene layer is demonstrated for the first time. InP nanowires on such a substrate have no stacking faults and possess an ideal crystallographic quality. At the same time, GaP nanowires have structural defects of the type of twins and the reversal of crystallographic phases at the top and at the base. The results of structural measurements demonstrate that the nanowires are formed in the wurtzite phase, which is not typical of bulk III–V materials.
About the authors
P. A. Alexeev
Ioffe Institute
Email: moment92@mail.ru
Russian Federation, St. Petersburg, 194021
G. E. Cirlin
ITMO University; St. Petersburg Academic University, Russian Academy of Sciences; Institute for Analytical Instrumentation, Russian Academy of Sciences; Peter the Great St. Petersburg Polytechnic University
Email: moment92@mail.ru
Russian Federation, St. Petersburg, 197101; St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 195251
R. R. Reznik
ITMO University
Author for correspondence.
Email: moment92@mail.ru
Russian Federation, St. Petersburg, 197101
K. P. Kotlyar
St. Petersburg Academic University, Russian Academy of Sciences
Email: moment92@mail.ru
Russian Federation, St. Petersburg, 194021
I. V. Ilkiv
St. Petersburg Academic University, Russian Academy of Sciences
Email: moment92@mail.ru
Russian Federation, St. Petersburg, 194021
I. P. Soshnikov
St. Petersburg Academic University, Russian Academy of Sciences; Institute for Analytical Instrumentation, Russian Academy of Sciences; Ioffe Institute
Email: moment92@mail.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 194021
S. P. Lebedev
Ioffe Institute
Email: moment92@mail.ru
Russian Federation, St. Petersburg, 194021
A. A. Lebedev
Ioffe Institute
Email: moment92@mail.ru
Russian Federation, St. Petersburg, 194021
D. A. Kirilenko
Ioffe Institute
Email: moment92@mail.ru
Russian Federation, St. Petersburg, 194021
