Formation of a  p -type emitter with the involvement of surfactants in GaAs photoelectric converters

L. B. Karlina; A. S. Vlasov; B. Ya. Ber; D. Yu. Kazantsev; N. Kh. Timoshina; M. M. Kulagina; A. B. Smirnov

doi:10.1134/S1063782617050116

Formation of a p-type emitter with the involvement of surfactants in GaAs photoelectric converters

Authors: Karlina L.B.¹, Vlasov A.S.¹, Ber B.Y.¹, Kazantsev D.Y.¹, Timoshina N.K.¹, Kulagina M.M.¹, Smirnov A.B.¹
Affiliations:
1. Ioffe Institute
Issue: Vol 51, No 5 (2017)
Pages: 667-671
Section: Physics of Semiconductor Devices
URL: https://journals.rcsi.science/1063-7826/article/view/199928
DOI: https://doi.org/10.1134/S1063782617050116
ID: 199928

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Abstract

The comparative characteristics of photovoltaic converters (of laser radiation) based on gallium arsenide with a p-type emitter formed by gas-phase diffusion in the presence of surfactants (isovalent impurities) and without them are reported. It is shown that the use of indium and phosphorus in the process of the formation of a p–n junction significantly affects the characteristics of the obtained devices.