Electroluminescence in n-GaSb/InAs/p-GaSb Heterostructures with a Single Quantum Well Grown by MOVPE
- Authors: Mikhailova M.P.1, Ivanov E.V.1, Danilov L.V.1, Levin R.V.1, Andreev I.A.1, Kunitsyna E.V.1, Yakovlev Y.P.1
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Affiliations:
- Ioffe Institute
- Issue: Vol 53, No 1 (2019)
- Pages: 46-50
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/205573
- DOI: https://doi.org/10.1134/S1063782619010159
- ID: 205573
Cite item
Abstract
The electroluminescent characteristics of a type-II n-GaSb/n-InAs/p-GaSb heterostructure with a single deep quantum well grown by metalorganic vapor-phase epitaxy are investigated. The energy-band diagram of the structure and the positions of the electron and heavy-hole energy levels are calculated. The analysis of the current–voltage characteristics demonstrates that the dark current in the structure under study flows via the tunneling mechanism. Intense electroluminescence characterized by a weak temperature dependence was observed in the spectral range of 3–4 μm at T = 77 and 300 K. The main electroluminescence band (hν = 0.40 eV at 77 K) corresponds to direct radiative transitions between electrons from level E1 in the InAs quantum well and heavy holes from the continuum at the n-GaSb/n-InAs heterointerface. A low-intensity electroluminescence band at hν = 0.27 eV (T = 77 K) originates from indirect (tunneling) transitions from the first electron level in the quantum well to the second level of heavy holes localized in the valence-band “notch” at the n-InAs/p-GaSb heterointerface.
About the authors
M. P. Mikhailova
Ioffe Institute
Author for correspondence.
Email: Mayamikh@gmail.com
Russian Federation, St. Petersburg, 194021
E. V. Ivanov
Ioffe Institute
Email: Mayamikh@gmail.com
Russian Federation, St. Petersburg, 194021
L. V. Danilov
Ioffe Institute
Email: Mayamikh@gmail.com
Russian Federation, St. Petersburg, 194021
R. V. Levin
Ioffe Institute
Email: Mayamikh@gmail.com
Russian Federation, St. Petersburg, 194021
I. A. Andreev
Ioffe Institute
Email: Mayamikh@gmail.com
Russian Federation, St. Petersburg, 194021
E. V. Kunitsyna
Ioffe Institute
Email: Mayamikh@gmail.com
Russian Federation, St. Petersburg, 194021
Yu. P. Yakovlev
Ioffe Institute
Email: Mayamikh@gmail.com
Russian Federation, St. Petersburg, 194021