Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells
- Authors: Blokhin S.A.1, Bobrov M.A.1, Blokhin A.A.1, Kuzmenkov A.G.1,2, Vasil’ev A.P.1,2, Zadiranov Y.M.1, Evropeytsev E.A.1, Sakharov A.V.1, Ledentsov N.N.3, Karachinsky L.Y.1,4, Ospennikov A.M.5, Maleev N.A.1, Ustinov V.M.1,2,6
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Affiliations:
- Ioffe Institute
- Submicron Heterostructures for Microelectronics, Research and Engineering Center
- VI Systems GmbH
- Connector Optics LLC
- Russia Institute of Radionavigation and Time RIRT
- Peter the Great St. Petersburg Polytechnic University
- Issue: Vol 52, No 1 (2018)
- Pages: 93-99
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/202283
- DOI: https://doi.org/10.1134/S1063782618010062
- ID: 202283
Cite item
Abstract
The emission-line width for 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells is studied. The width of the emission line for a laser with a 2-μm oxide current aperture attains it minimum (~110 MHz) at an output power of 0.8 mW. As the optical output power is further increased, anomalous broadening of the emission line is observed; this is apparently caused by an increase in the α-factor as a result of a decrease in the differential gain in the active region under conditions of increased concentration of charge carriers and of high internal optical losses in the microcavity. The α-factor is estimated using two independent methods.
About the authors
S. A. Blokhin
Ioffe Institute
Author for correspondence.
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. A. Bobrov
Ioffe Institute
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. A. Blokhin
Ioffe Institute
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. G. Kuzmenkov
Ioffe Institute; Submicron Heterostructures for Microelectronics, Research and Engineering Center
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021
A. P. Vasil’ev
Ioffe Institute; Submicron Heterostructures for Microelectronics, Research and Engineering Center
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021
Yu. M. Zadiranov
Ioffe Institute
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
E. A. Evropeytsev
Ioffe Institute
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. V. Sakharov
Ioffe Institute
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. N. Ledentsov
VI Systems GmbH
Email: blokh@mail.ioffe.ru
Germany, Berlin, D-10623
L. Ya. Karachinsky
Ioffe Institute; Connector Optics LLC
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194292
A. M. Ospennikov
Russia Institute of Radionavigation and Time RIRT
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 192012
N. A. Maleev
Ioffe Institute
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. M. Ustinov
Ioffe Institute; Submicron Heterostructures for Microelectronics, Research and Engineering Center; Peter the Great St. Petersburg Polytechnic University
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021; St. Petersburg, 195251