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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
Home > Archives

Archives

Year Issues
2019
  • Vol 53, No 16
  • Vol 53, No 15
  • Vol 53, No 14
  • Vol 53, No 13
  • Vol 53, No 12
  • Vol 53, No 11
  • Vol 53, No 10
  • Vol 53, No 9
  • Vol 53, No 8
  • Vol 53, No 7
  • Vol 53, No 6
  • Vol 53, No 5
  • Vol 53, No 4
  • Vol 53, No 3
  • Vol 53, No 2
  • Vol 53, No 1
2018
  • Vol 52, No 16
  • Vol 52, No 15
  • Vol 52, No 14
  • Vol 52, No 13
  • Vol 52, No 12
  • Vol 52, No 11
  • Vol 52, No 10
  • Vol 52, No 9
  • Vol 52, No 8
  • Vol 52, No 7
  • Vol 52, No 6
  • Vol 52, No 5
  • Vol 52, No 4
  • Vol 52, No 3
  • Vol 52, No 2
  • Vol 52, No 1
2017
  • Vol 51, No 13
  • Vol 51, No 12
  • Vol 51, No 11
  • Vol 51, No 10
  • Vol 51, No 9
  • Vol 51, No 8
  • Vol 51, No 7
  • Vol 51, No 6
  • Vol 51, No 5
  • Vol 51, No 4
  • Vol 51, No 3
  • Vol 51, No 2
  • Vol 51, No 1
2016
  • Vol 50, No 13
  • Vol 50, No 12
  • Vol 50, No 11
  • Vol 50, No 10
  • Vol 50, No 9
  • Vol 50, No 8
  • Vol 50, No 7
  • Vol 50, No 6
  • Vol 50, No 5
  • Vol 50, No 4
  • Vol 50, No 3
  • Vol 50, No 2
  • Vol 50, No 1

    
 

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