Diode Lasers with Near-Surface Active Region
- Authors: Payusov A.S.1,2, Gordeev N.Y.1, Serin A.A.1, Kulagina M.M.1, Kalyuzhnyy N.A.1, Mintairov S.A.1, Maximov M.V.2, Zhukov A.E.2,3
-
Affiliations:
- Ioffe institute
- St Petersburg National Research Academic University
- Peter the Great Polytechnic University
- Issue: Vol 52, No 14 (2018)
- Pages: 1901-1904
- Section: Lasers and Optoelectronic Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/205151
- DOI: https://doi.org/10.1134/S1063782618140233
- ID: 205151
Cite item
Abstract
Edge-emitting diode lasers with shallow location of a quantum-well active region at a depth of 0.92 μm were developed and their thermal resistance was evaluated from the analysis of true spontaneous emission spectra through the top contact window. Owing to a close spacing between the active region and laser heatsink, effective heat removal is achieved under continuous wave operation that is characterized by a low value of specific thermal resistance of 6 × 10–3 K/(W cm2).
About the authors
A. S. Payusov
Ioffe institute; St Petersburg National Research Academic University
Email: zhukale@gmail.com
Russian Federation, St. Petersburg; St. Petersburg
N. Yu. Gordeev
Ioffe institute
Email: zhukale@gmail.com
Russian Federation, St. Petersburg
A. A. Serin
Ioffe institute
Email: zhukale@gmail.com
Russian Federation, St. Petersburg
M. M. Kulagina
Ioffe institute
Email: zhukale@gmail.com
Russian Federation, St. Petersburg
N. A. Kalyuzhnyy
Ioffe institute
Email: zhukale@gmail.com
Russian Federation, St. Petersburg
S. A. Mintairov
Ioffe institute
Email: zhukale@gmail.com
Russian Federation, St. Petersburg
M. V. Maximov
St Petersburg National Research Academic University
Email: zhukale@gmail.com
Russian Federation, St. Petersburg
A. E. Zhukov
St Petersburg National Research Academic University; Peter the Great Polytechnic University
Author for correspondence.
Email: zhukale@gmail.com
Russian Federation, St. Petersburg; St. Petersburg