Effect of Nickel and Copper Introduced at Room Temperature on the Recombination Properties of Extended Defects in Silicon
- Authors: Orlov V.I.1,2, Yarykin N.A.1, Yakimov E.B.1,3
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Affiliations:
- Institute of Microelectronics Technology and Ultra-High-Purity Materials, Russian Academy of Sciences
- Institute of Solid-State Physics, Russian Academy of Sciences
- National University of Science and Technology “MISiS”
- Issue: Vol 53, No 4 (2019)
- Pages: 411-414
- Section: Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
- URL: https://journals.rcsi.science/1063-7826/article/view/205908
- DOI: https://doi.org/10.1134/S1063782619040225
- ID: 205908
Cite item
Abstract
The change in the recombination properties of individual dislocations and dislocation trails in silicon due to the diffusion of nickel and copper during chemical-mechanical polishing at room temperature is studied by the electron-beam- and light-beam-induced current techniques. It is found that the introduction of nickel results in an increase in the recombination activity of both dislocations and dislocation trails. The introduction of copper does not induce any substantial change in the contrast of extended defects.
About the authors
V. I. Orlov
Institute of Microelectronics Technology and Ultra-High-Purity Materials, Russian Academy of Sciences; Institute of Solid-State Physics, Russian Academy of Sciences
Author for correspondence.
Email: orlov@issp.ac.ru
Russian Federation, Chernogolovka, Moscow region, 142432; Chernogolovka, Moscow region, 142432
N. A. Yarykin
Institute of Microelectronics Technology and Ultra-High-Purity Materials, Russian Academy of Sciences
Email: orlov@issp.ac.ru
Russian Federation, Chernogolovka, Moscow region, 142432
E. B. Yakimov
Institute of Microelectronics Technology and Ultra-High-Purity Materials, Russian Academy of Sciences; National University of Science and Technology “MISiS”
Email: orlov@issp.ac.ru
Russian Federation, Chernogolovka, Moscow region, 142432; Moscow, 119049