Performance characteristics of p-channel FinFETs with varied Si-fin extension lengths for source and drain contacts
- Authors: Liaw Y.1, Liao W.2,3, Wang M.4, Chen C.4, Li D.2, Gu H.3, Zou X.1
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Affiliations:
- Department of Electronic Science and Technology
- Faculty of School of Electronic Information
- Faculty of Physics and Electronic Technology
- Department of Electronic Engineering
- Issue: Vol 51, No 12 (2017)
- Pages: 1650-1655
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/202063
- DOI: https://doi.org/10.1134/S1063782617120120
- ID: 202063
Cite item
Abstract
The length of Source/Drain (S/D) extension (LSDE) of nano-node p-channel FinFETs (pFinFETs) on SOI wafer influencing the device performance is exposed, especially in drive current and gate/S/D leakage. In observation, the longer LSDEpFinFET provides a larger series resistance and degrades the drive current (IDS), but the isolation capability between the S/D contacts and the gate electrode is increased. The shorter LSDE plus the shorter channel length demonstrates a higher trans-conductance (Gm) contributing to a higher drive current. Moreover, the subthreshold swing (S.S.) at longer channel length and longer LSDE represents a higher value indicating the higher amount of the interface states which possibly deteriorate the channel mobility causing the lower drive current.
About the authors
Yue-Gie Liaw
Department of Electronic Science and Technology
Email: wsliaoumc@yahoo.com.tw
China, Wuhan
Wen-Shiang Liao
Faculty of School of Electronic Information; Faculty of Physics and Electronic Technology
Author for correspondence.
Email: wsliaoumc@yahoo.com.tw
China, Wuhan; Wuhan
Mu-Chun Wang
Department of Electronic Engineering
Email: wsliaoumc@yahoo.com.tw
Taiwan, Province of China, Hsinchu
Chii-Wen Chen
Department of Electronic Engineering
Email: wsliaoumc@yahoo.com.tw
Taiwan, Province of China, Hsinchu
Deshi Li
Faculty of School of Electronic Information
Email: wsliaoumc@yahoo.com.tw
China, Wuhan
Haoshuang Gu
Faculty of Physics and Electronic Technology
Email: wsliaoumc@yahoo.com.tw
China, Wuhan
Xuecheng Zou
Department of Electronic Science and Technology
Email: wsliaoumc@yahoo.com.tw
China, Wuhan