Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

The dependences of the electronic-level positions and transition oscillator strengths on an applied electric field are studied for a terahertz quantum-cascade laser (THz QCL) with the resonant-phonon depopulation scheme, based on a cascade consisting of three quantum wells. The electric-field strengths for two characteristic states of the THz QCL under study are calculated: (i) “parasitic” current flow in the structure when the lasing threshold has not yet been reached; (ii) the lasing threshold is reached. Heat-transfer processes in the THz QCL under study are simulated to determine the optimum supply and cooling conditions. The conditions of thermocompression bonding of the laser ridge stripe with an n+-GaAs conductive substrate based on Au–Au are selected to produce a mechanically stronger contact with a higher thermal conductivity.

作者简介

R. Khabibullin

Institute of Ultrahigh Frequency Semiconductor Electronics

编辑信件的主要联系方式.
Email: khabibullin@isvch.ru
俄罗斯联邦, Nagornyi pr. 7, str. 5, Moscow, 117105

N. Shchavruk

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: khabibullin@isvch.ru
俄罗斯联邦, Nagornyi pr. 7, str. 5, Moscow, 117105

A. Klochkov

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: khabibullin@isvch.ru
俄罗斯联邦, Nagornyi pr. 7, str. 5, Moscow, 117105

I. Glinskiy

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: khabibullin@isvch.ru
俄罗斯联邦, Nagornyi pr. 7, str. 5, Moscow, 117105

N. Zenchenko

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: khabibullin@isvch.ru
俄罗斯联邦, Nagornyi pr. 7, str. 5, Moscow, 117105

D. Ponomarev

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: khabibullin@isvch.ru
俄罗斯联邦, Nagornyi pr. 7, str. 5, Moscow, 117105

P. Maltsev

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: khabibullin@isvch.ru
俄罗斯联邦, Nagornyi pr. 7, str. 5, Moscow, 117105

A. Zaycev

National Research University of Electronic Technology (MIET)

Email: khabibullin@isvch.ru
俄罗斯联邦, 4806 proezd 5, Zelenograd, Moscow oblast, 124498

F. Zubov

Saint Petersburg Academic University—Nanotechnology Research and Education Center

Email: khabibullin@isvch.ru
俄罗斯联邦, ul. Khlopina 8/3, St. Petersburg, 194021

A. Zhukov

Saint Petersburg Academic University—Nanotechnology Research and Education Center; Saint Petersburg Science Center

Email: khabibullin@isvch.ru
俄罗斯联邦, ul. Khlopina 8/3, St. Petersburg, 194021; Universitetskaya nab. 5, St. Petersburg, 199034

G. Cirlin

Saint Petersburg Academic University—Nanotechnology Research and Education Center; Saint Petersburg Science Center

Email: khabibullin@isvch.ru
俄罗斯联邦, ul. Khlopina 8/3, St. Petersburg, 194021; Universitetskaya nab. 5, St. Petersburg, 199034

Zh. Alferov

Saint Petersburg Academic University—Nanotechnology Research and Education Center; Saint Petersburg Science Center

Email: khabibullin@isvch.ru
俄罗斯联邦, ul. Khlopina 8/3, St. Petersburg, 194021; Universitetskaya nab. 5, St. Petersburg, 199034

补充文件

附件文件
动作
1. JATS XML

版权所有 © Pleiades Publishing, Ltd., 2017