Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme


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Abstract

The dependences of the electronic-level positions and transition oscillator strengths on an applied electric field are studied for a terahertz quantum-cascade laser (THz QCL) with the resonant-phonon depopulation scheme, based on a cascade consisting of three quantum wells. The electric-field strengths for two characteristic states of the THz QCL under study are calculated: (i) “parasitic” current flow in the structure when the lasing threshold has not yet been reached; (ii) the lasing threshold is reached. Heat-transfer processes in the THz QCL under study are simulated to determine the optimum supply and cooling conditions. The conditions of thermocompression bonding of the laser ridge stripe with an n+-GaAs conductive substrate based on Au–Au are selected to produce a mechanically stronger contact with a higher thermal conductivity.

About the authors

R. A. Khabibullin

Institute of Ultrahigh Frequency Semiconductor Electronics

Author for correspondence.
Email: khabibullin@isvch.ru
Russian Federation, Nagornyi pr. 7, str. 5, Moscow, 117105

N. V. Shchavruk

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: khabibullin@isvch.ru
Russian Federation, Nagornyi pr. 7, str. 5, Moscow, 117105

A. N. Klochkov

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: khabibullin@isvch.ru
Russian Federation, Nagornyi pr. 7, str. 5, Moscow, 117105

I. A. Glinskiy

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: khabibullin@isvch.ru
Russian Federation, Nagornyi pr. 7, str. 5, Moscow, 117105

N. V. Zenchenko

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: khabibullin@isvch.ru
Russian Federation, Nagornyi pr. 7, str. 5, Moscow, 117105

D. S. Ponomarev

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: khabibullin@isvch.ru
Russian Federation, Nagornyi pr. 7, str. 5, Moscow, 117105

P. P. Maltsev

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: khabibullin@isvch.ru
Russian Federation, Nagornyi pr. 7, str. 5, Moscow, 117105

A. A. Zaycev

National Research University of Electronic Technology (MIET)

Email: khabibullin@isvch.ru
Russian Federation, 4806 proezd 5, Zelenograd, Moscow oblast, 124498

F. I. Zubov

Saint Petersburg Academic University—Nanotechnology Research and Education Center

Email: khabibullin@isvch.ru
Russian Federation, ul. Khlopina 8/3, St. Petersburg, 194021

A. E. Zhukov

Saint Petersburg Academic University—Nanotechnology Research and Education Center; Saint Petersburg Science Center

Email: khabibullin@isvch.ru
Russian Federation, ul. Khlopina 8/3, St. Petersburg, 194021; Universitetskaya nab. 5, St. Petersburg, 199034

G. E. Cirlin

Saint Petersburg Academic University—Nanotechnology Research and Education Center; Saint Petersburg Science Center

Email: khabibullin@isvch.ru
Russian Federation, ul. Khlopina 8/3, St. Petersburg, 194021; Universitetskaya nab. 5, St. Petersburg, 199034

Zh. I. Alferov

Saint Petersburg Academic University—Nanotechnology Research and Education Center; Saint Petersburg Science Center

Email: khabibullin@isvch.ru
Russian Federation, ul. Khlopina 8/3, St. Petersburg, 194021; Universitetskaya nab. 5, St. Petersburg, 199034


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