Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme
- Authors: Khabibullin R.A.1, Shchavruk N.V.1, Klochkov A.N.1, Glinskiy I.A.1, Zenchenko N.V.1, Ponomarev D.S.1, Maltsev P.P.1, Zaycev A.A.2, Zubov F.I.3, Zhukov A.E.3,4, Cirlin G.E.3,4, Alferov Z.I.3,4
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Affiliations:
- Institute of Ultrahigh Frequency Semiconductor Electronics
- National Research University of Electronic Technology (MIET)
- Saint Petersburg Academic University—Nanotechnology Research and Education Center
- Saint Petersburg Science Center
- Issue: Vol 51, No 4 (2017)
- Pages: 514-519
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/199775
- DOI: https://doi.org/10.1134/S106378261704008X
- ID: 199775
Cite item
Abstract
The dependences of the electronic-level positions and transition oscillator strengths on an applied electric field are studied for a terahertz quantum-cascade laser (THz QCL) with the resonant-phonon depopulation scheme, based on a cascade consisting of three quantum wells. The electric-field strengths for two characteristic states of the THz QCL under study are calculated: (i) “parasitic” current flow in the structure when the lasing threshold has not yet been reached; (ii) the lasing threshold is reached. Heat-transfer processes in the THz QCL under study are simulated to determine the optimum supply and cooling conditions. The conditions of thermocompression bonding of the laser ridge stripe with an n+-GaAs conductive substrate based on Au–Au are selected to produce a mechanically stronger contact with a higher thermal conductivity.
About the authors
R. A. Khabibullin
Institute of Ultrahigh Frequency Semiconductor Electronics
Author for correspondence.
Email: khabibullin@isvch.ru
Russian Federation, Nagornyi pr. 7, str. 5, Moscow, 117105
N. V. Shchavruk
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: khabibullin@isvch.ru
Russian Federation, Nagornyi pr. 7, str. 5, Moscow, 117105
A. N. Klochkov
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: khabibullin@isvch.ru
Russian Federation, Nagornyi pr. 7, str. 5, Moscow, 117105
I. A. Glinskiy
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: khabibullin@isvch.ru
Russian Federation, Nagornyi pr. 7, str. 5, Moscow, 117105
N. V. Zenchenko
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: khabibullin@isvch.ru
Russian Federation, Nagornyi pr. 7, str. 5, Moscow, 117105
D. S. Ponomarev
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: khabibullin@isvch.ru
Russian Federation, Nagornyi pr. 7, str. 5, Moscow, 117105
P. P. Maltsev
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: khabibullin@isvch.ru
Russian Federation, Nagornyi pr. 7, str. 5, Moscow, 117105
A. A. Zaycev
National Research University of Electronic Technology (MIET)
Email: khabibullin@isvch.ru
Russian Federation, 4806 proezd 5, Zelenograd, Moscow oblast, 124498
F. I. Zubov
Saint Petersburg Academic University—Nanotechnology Research and Education Center
Email: khabibullin@isvch.ru
Russian Federation, ul. Khlopina 8/3, St. Petersburg, 194021
A. E. Zhukov
Saint Petersburg Academic University—Nanotechnology Research and Education Center; Saint Petersburg Science Center
Email: khabibullin@isvch.ru
Russian Federation, ul. Khlopina 8/3, St. Petersburg, 194021; Universitetskaya nab. 5, St. Petersburg, 199034
G. E. Cirlin
Saint Petersburg Academic University—Nanotechnology Research and Education Center; Saint Petersburg Science Center
Email: khabibullin@isvch.ru
Russian Federation, ul. Khlopina 8/3, St. Petersburg, 194021; Universitetskaya nab. 5, St. Petersburg, 199034
Zh. I. Alferov
Saint Petersburg Academic University—Nanotechnology Research and Education Center; Saint Petersburg Science Center
Email: khabibullin@isvch.ru
Russian Federation, ul. Khlopina 8/3, St. Petersburg, 194021; Universitetskaya nab. 5, St. Petersburg, 199034