Molecular-Dynamics Simulation of the Low-Temperature Surface Reconstruction of a GaAs(001) Surface during the Nanoindentation Process

N. D. Prasolov; A. A. Gutkin; P. N. Brunkov

doi:10.1134/S1063782619100166

Molecular-Dynamics Simulation of the Low-Temperature Surface Reconstruction of a GaAs(001) Surface during the Nanoindentation Process

Authors: Prasolov N.D.¹, Gutkin A.A.², Brunkov P.N.¹^,2
Affiliations:
1. ITMO University
2. Ioffe Institute
Issue: Vol 53, No 10 (2019)
Pages: 1386-1388
Section: Surfaces, Interfaces, and Thin Films
URL: https://journals.rcsi.science/1063-7826/article/view/207236
DOI: https://doi.org/10.1134/S1063782619100166
ID: 207236

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Abstract

Nanoindentation to a depth of 1 nm in (001) GaAs surfaces terminated by As simulated in the temperature range from 1 to 15 K using the molecular-dynamics method is simulated. It is shown that this is accompanied by surface reconstruction with the formation of stable dimers As (1 × 2), which do not disappear after indenter withdrawal from the surface.