Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells


Cite item

Full Text

Open Access Open Access
Restricted Access Access granted
Restricted Access Subscription Access

Abstract

The mobility and quantum time of Dirac electrons in HgTe quantum wells with near-critical thickness corresponding to the transition from the direct to inverted spectrum are experimentally and theoretically investigated. The nonmonotonic dependence of the mobility on the electron concentration is experimentally established. The theory of the scattering of Dirac electrons by impurities and irregularities of the well boundaries leading to well thickness fluctuations is constructed. The comparison of this theory with an experiment shows their good agreement and explains the observed nonmonotonic behavior by a decrease in the ratio between the de Broglie wavelength of Dirac electrons and the characteristic size of irregularities with increasing electron concentration. It is established that the transport time is larger than the quantum time by almost an order of magnitude in the case of the dominance of roughness scattering. The transition from macroscopic to mesoscopic samples is studied and an abrupt decrease in both the mobility and quantum time is observed. This behavior is attributed to the size effect on the free path length.

About the authors

A. A. Dobretsova

Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch; Novosibirsk State University

Author for correspondence.
Email: DobretsovaAA@gmail.com
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090

Z. D. Kvon

Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch; Novosibirsk State University

Email: DobretsovaAA@gmail.com
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090

L. S. Braginskii

Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch; Novosibirsk State University

Email: DobretsovaAA@gmail.com
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090

M. V. Entin

Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch; Novosibirsk State University

Email: DobretsovaAA@gmail.com
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090

N. N. Mikhailov

Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch; Novosibirsk State University

Email: DobretsovaAA@gmail.com
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090


Copyright (c) 2018 Pleiades Publishing, Ltd.

This website uses cookies

You consent to our cookies if you continue to use our website.

About Cookies