Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K
- Authors: Mynbaev K.D.1,2, Bazhenov N.L.1, Semakova A.A.1,2, Mikhailova M.P.1, Stoyanov N.D.3, Kizhaev S.S.3, Molchanov S.S.3, Astakhova A.P.3, Chernyaev A.V.1,3, Lipsanen H.2,4, Bougrov V.E.2
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Affiliations:
- Ioffe Physical–Technical Institute
- ITMO University
- Microsensor Technology
- Aalto University
- Issue: Vol 51, No 2 (2017)
- Pages: 239-244
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/199486
- DOI: https://doi.org/10.1134/S1063782617020117
- ID: 199486
Cite item
Abstract
The electroluminescence of InAs/InAsSbP and InAsSb/InAsSbP LED heterostructures grown on InAs substrates is studied in the temperature range T = 4.2–300 K. At low temperatures (T = 4.2–100 K), stimulated emission is observed for the InAs/InAsSbP and InAsSb/InAsSbP heterostructures with an optical cavity formed normal to the growth plane at wavelengths of, respectively, 3.03 and 3.55 μm. The emission becomes spontaneous at T > 70 K due to the resonant “switch-on” of the CHHS Auger recombination process in which the energy of a recombining electron–hole pair is transferred to a hole, with hole transition to the spin–orbit-split band. It remains spontaneous up to room temperature because of the influence exerted by other Auger processes. The results obtained show that InAs/InAs(Sb)/InAsSbP structures are promising for the fabrication of vertically emitting mid-IR lasers.
About the authors
K. D. Mynbaev
Ioffe Physical–Technical Institute; ITMO University
Author for correspondence.
Email: mynkad@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101
N. L. Bazhenov
Ioffe Physical–Technical Institute
Email: mynkad@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. A. Semakova
Ioffe Physical–Technical Institute; ITMO University
Email: mynkad@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101
M. P. Mikhailova
Ioffe Physical–Technical Institute
Email: mynkad@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. D. Stoyanov
Microsensor Technology
Email: mynkad@mail.ioffe.ru
Russian Federation, St. Petersburg, 194223
S. S. Kizhaev
Microsensor Technology
Email: mynkad@mail.ioffe.ru
Russian Federation, St. Petersburg, 194223
S. S. Molchanov
Microsensor Technology
Email: mynkad@mail.ioffe.ru
Russian Federation, St. Petersburg, 194223
A. P. Astakhova
Microsensor Technology
Email: mynkad@mail.ioffe.ru
Russian Federation, St. Petersburg, 194223
A. V. Chernyaev
Ioffe Physical–Technical Institute; Microsensor Technology
Email: mynkad@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194223
H. Lipsanen
ITMO University; Aalto University
Email: mynkad@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101; Aalto, 02150
V. E. Bougrov
ITMO University
Email: mynkad@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101