Email this article Assessment of the resistance to diffusion destruction of AlAs/GaAs nanoscale resonant-tunneling heterostructures by IR spectral ellipsometry
- Authors: Makeev M.O.1, Ivanov Y.A.1, Meshkov S.A.1
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Affiliations:
- Bauman State Technical University
- Issue: Vol 50, No 1 (2016)
- Pages: 83-88
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/196687
- DOI: https://doi.org/10.1134/S1063782616010140
- ID: 196687
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Abstract
A technique for assessing the quality of AlAs/GaAs nanoscale resonant-tunneling heterostructures from the viewpoint of their resistance to diffusion destruction is developed. The diffusive spreading of AlAs/GaAs heterostructure layers is revealed by infrared (IR) spectral ellipsometry and the Al and Si diffusion coefficients in GaAs are determined.
About the authors
M. O. Makeev
Bauman State Technical University
Author for correspondence.
Email: mc.stiv@gmail.com
Russian Federation, Vtoraya Baumanskaya ul. 5, Moscow, 105005
Y. A. Ivanov
Bauman State Technical University
Email: mc.stiv@gmail.com
Russian Federation, Vtoraya Baumanskaya ul. 5, Moscow, 105005
S. A. Meshkov
Bauman State Technical University
Email: mc.stiv@gmail.com
Russian Federation, Vtoraya Baumanskaya ul. 5, Moscow, 105005
