On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions
- Authors: Veselov D.A.1, Shashkin I.S.1, Bakhvalov K.V.1, Lyutetskiy A.V.1, Pikhtin N.A.1, Rastegaeva M.G.1, Slipchenko S.O.1, Bechvay E.A.1, Strelets V.A.1, Shamakhov V.V.1, Tarasov I.S.1
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Affiliations:
- Ioffe Physical–Technical Institute
- Issue: Vol 50, No 9 (2016)
- Pages: 1225-1230
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197912
- DOI: https://doi.org/10.1134/S1063782616090244
- ID: 197912
Cite item
Abstract
Semiconductor lasers based on MOCVD-grown AlGaInAs/InP separate-confinement heterostructures are studied. It is shown that raising only the energy-gap width of AlGaInAs-waveguides without the introduction of additional barriers results in more pronounced current leakage into the cladding layers. It is found that the introduction of additional barrier layers at the waveguide–cladding-layer interface blocks current leakage into the cladding layers, but results in an increase in the internal optical loss with increasing pump current. It is experimentally demonstrated that the introduction of blocking layers makes it possible to obtain maximum values of the internal quantum efficiency of stimulated emission (92%) and continuouswave output optical power (3.2 W) in semiconductor lasers in the eye-safe wavelength range (1400–1600 nm).
About the authors
D. A. Veselov
Ioffe Physical–Technical Institute
Author for correspondence.
Email: dmitriy90@list.ru
Russian Federation, St. Petersburg, 194021
I. S. Shashkin
Ioffe Physical–Technical Institute
Email: dmitriy90@list.ru
Russian Federation, St. Petersburg, 194021
K. V. Bakhvalov
Ioffe Physical–Technical Institute
Email: dmitriy90@list.ru
Russian Federation, St. Petersburg, 194021
A. V. Lyutetskiy
Ioffe Physical–Technical Institute
Email: dmitriy90@list.ru
Russian Federation, St. Petersburg, 194021
N. A. Pikhtin
Ioffe Physical–Technical Institute
Email: dmitriy90@list.ru
Russian Federation, St. Petersburg, 194021
M. G. Rastegaeva
Ioffe Physical–Technical Institute
Email: dmitriy90@list.ru
Russian Federation, St. Petersburg, 194021
S. O. Slipchenko
Ioffe Physical–Technical Institute
Email: dmitriy90@list.ru
Russian Federation, St. Petersburg, 194021
E. A. Bechvay
Ioffe Physical–Technical Institute
Email: dmitriy90@list.ru
Russian Federation, St. Petersburg, 194021
V. A. Strelets
Ioffe Physical–Technical Institute
Email: dmitriy90@list.ru
Russian Federation, St. Petersburg, 194021
V. V. Shamakhov
Ioffe Physical–Technical Institute
Email: dmitriy90@list.ru
Russian Federation, St. Petersburg, 194021
I. S. Tarasov
Ioffe Physical–Technical Institute
Email: dmitriy90@list.ru
Russian Federation, St. Petersburg, 194021