Email this article Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure
- Authors: Saidov A.S.1, Leyderman A.Y.1, Usmonov S.N.1, Amonov K.A.1
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Affiliations:
- Starodubtsev Physical–Technical Institute, Academy of Sciences of Uzbekistan
- Issue: Vol 52, No 9 (2018)
- Pages: 1188-1192
- Section: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/204057
- DOI: https://doi.org/10.1134/S1063782618090142
- ID: 204057
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Abstract
The current–voltage characteristics of p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) heterostructures are studied at various temperatures. It is found that the current–voltage characteristics of such structures contain a portion of a sublinear increase in the current with voltage such as V = V0 exp(Jad). The concentrations of deep impurities responsible for the appearance of the sublinear portion in the current–voltage characteristic are estimated. The experimental results are explained based on the theory of the injection depletion effect.
About the authors
A. S. Saidov
Starodubtsev Physical–Technical Institute, Academy of Sciences of Uzbekistan
Author for correspondence.
Email: kvant.ph@mail.ru
Uzbekistan, Tashkent, 100084
A. Yu. Leyderman
Starodubtsev Physical–Technical Institute, Academy of Sciences of Uzbekistan
Email: kvant.ph@mail.ru
Uzbekistan, Tashkent, 100084
Sh. N. Usmonov
Starodubtsev Physical–Technical Institute, Academy of Sciences of Uzbekistan
Email: kvant.ph@mail.ru
Uzbekistan, Tashkent, 100084
K. A. Amonov
Starodubtsev Physical–Technical Institute, Academy of Sciences of Uzbekistan
Email: kvant.ph@mail.ru
Uzbekistan, Tashkent, 100084
