Email this article Relaxation oscillations of superluminescence in a semiconductor caused by recovery of the Fermi distribution of nonequilibrium electrons
- Authors: Kumekov S.E.1, Mustafin A.T.1, Mussatay S.S.1
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Affiliations:
- Kazakh National Technical University
- Issue: Vol 50, No 4 (2016)
- Pages: 453-456
- Section: Spectroscopy, Interaction with Radiation
- URL: https://journals.rcsi.science/1063-7826/article/view/196969
- DOI: https://doi.org/10.1134/S106378261604014X
- ID: 196969
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Abstract
It is shown that modulation of the superluminescence intensity on a characteristic time scale on the order of a few picoseconds may occur in a semiconductor because of relaxation oscillations that result from the “healing” of local perturbations of the quasi-Fermi distribution of nonequilibrium electrons in energy space. The conditions for observing this effect in GaAs are estimated.
About the authors
S. E. Kumekov
Kazakh National Technical University
Author for correspondence.
Email: skumekov@mail.ru
Kazakhstan, Almaty, 050013
A. T. Mustafin
Kazakh National Technical University
Email: skumekov@mail.ru
Kazakhstan, Almaty, 050013
S. S. Mussatay
Kazakh National Technical University
Email: skumekov@mail.ru
Kazakhstan, Almaty, 050013
