Matrix Calculation of the Spectral Characteristics of AII–BVI Semiconductors Doped with Iron-Group Ions

Abstract

A method for the matrix calculation of the spectral characteristics of AII–BVI semiconductors doped with iron-group ions is proposed, which takes into account all possible interactions in the ion and the effect of intramolecular surrounding fields of different symmetries. A technique for calculating the oscillator strength on the basis of eigenfunctions of the resulting states of 3d⁷, 3d⁸, and 3d⁶ electron configurations is developed. The spectral regularities of the Co²⁺, Ni²⁺, and Fe²⁺ energy structures for the ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, and CdTe materials are studied. All possible spectral bands in iron-group ions implanted in AII–BVI semiconductors in the range of 1.3–3 μm are established. The possibility of implementing the laser effect on these materials is estimated.