On the Combined Application of Raman Spectroscopy and Photoluminescence Spectroscopy for the Diagnostics of Multilayer Heterostructures

S. M. Plankina; O. V. Vikhrova; B. N. Zvonkov; S. Yu. Zubkov; R. N. Kriukov; A. V. Nezhdanov; D. A. Pavlov; I. Yu. Pashen’kin; A. A. Sushkov

doi:10.1134/S1063782619090148

On the Combined Application of Raman Spectroscopy and Photoluminescence Spectroscopy for the Diagnostics of Multilayer Heterostructures

Authors: Plankina S.M.¹, Vikhrova O.V.², Zvonkov B.N.², Zubkov S.Y.¹, Kriukov R.N.¹, Nezhdanov A.V.¹, Pavlov D.A.¹, Pashen’kin I.Y.³, Sushkov A.A.¹
Affiliations:
1. Lobachevsky State University of Nizhny Novgorod
2. Research Institute for Physics and Technology, Lobachevsky State University of Nizhny Novgorod
3. Institute for Physics of Microstructures, Russian Academy of Sciences
Issue: Vol 53, No 9 (2019)
Pages: 1207-1210
Section: Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019
URL: https://journals.rcsi.science/1063-7826/article/view/206794
DOI: https://doi.org/10.1134/S1063782619090148
ID: 206794

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Abstract
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Abstract

The results of studying GaInAs/GaInP/GaAs photodiode structures grown by metal–organic vapor-phase epitaxy are reported. A procedure for the diagnostics of such multilayer structures is developed. The procedure is based on the application of Raman spectroscopy in combination with photoluminescence spectroscopy in the mode of the lateral scanning of transverse cleavages. The compositions of the GaInAs and GaInP solid solutions are determined.

Keywords

metal–organic vapor phase epitaxy, heterostructures, metamorphous layer, Raman scattering, photoluminescence

About the authors

S. M. Plankina

Lobachevsky State University of Nizhny Novgorod

Author for correspondence.
Email: plankina@phys.unn.ru
Russian Federation, Nizhny Novgorod, 603950