Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates
- Authors: Baidus N.V.1, Aleshkin V.Y.1,2, Dubinov A.A.1,2, Kudryavtsev K.E.1,2, Nekorkin S.M.1, Novikov A.V.1,2, Pavlov D.A.1, Rykov A.V.1, Sushkov A.A.1, Shaleev M.V.1,2, Yunin P.A.1,2, Yurasov D.V.1,2, Yablonskiy A.N.1, Krasilnik Z.F.1,2
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Affiliations:
- Lobachevsky State University of Nizhny Novgorod
- Institute for Physics of Microstructures
- Issue: Vol 51, No 11 (2017)
- Pages: 1527-1530
- Section: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201929
- DOI: https://doi.org/10.1134/S1063782617110070
- ID: 201929
Cite item
Abstract
The growth of InGaAs/GaAs/AlGaAs laser structures by MOCVD at low pressures on Si(001) substrates with a Ge epitaxial metamorphic buffer layer of various thicknesses is studied. The results of the influence of the growth temperature and incorporation of additional AlAs layers at the boundary with the Ge/Si(001) substrate on the crystalline and optical quality of the formed III–V structures are presented. It is shown that the incorporation of the AlAs/GaAs/AlAs lattice at the initial growth stages of III–V heterostructures on Ge buffer layers grown on exact Si(001) substrates makes it possible to considerably decrease the density of threading defects and, consequently, form effectively emitting laser structures. The possibility of growing strained InGaAs quantum wells on Si(001) substrates allowing stimulated radiation in a wavelength region longer than 1100 nm is shown.
About the authors
N. V. Baidus
Lobachevsky State University of Nizhny Novgorod
Author for correspondence.
Email: bnv@nifti.unn.ru
Russian Federation, Nizhny Novgorod, 603950
V. Ya. Aleshkin
Lobachevsky State University of Nizhny Novgorod; Institute for Physics of Microstructures
Email: bnv@nifti.unn.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
A. A. Dubinov
Lobachevsky State University of Nizhny Novgorod; Institute for Physics of Microstructures
Email: bnv@nifti.unn.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
K. E. Kudryavtsev
Lobachevsky State University of Nizhny Novgorod; Institute for Physics of Microstructures
Email: bnv@nifti.unn.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
S. M. Nekorkin
Lobachevsky State University of Nizhny Novgorod
Email: bnv@nifti.unn.ru
Russian Federation, Nizhny Novgorod, 603950
A. V. Novikov
Lobachevsky State University of Nizhny Novgorod; Institute for Physics of Microstructures
Email: bnv@nifti.unn.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
D. A. Pavlov
Lobachevsky State University of Nizhny Novgorod
Email: bnv@nifti.unn.ru
Russian Federation, Nizhny Novgorod, 603950
A. V. Rykov
Lobachevsky State University of Nizhny Novgorod
Email: bnv@nifti.unn.ru
Russian Federation, Nizhny Novgorod, 603950
A. A. Sushkov
Lobachevsky State University of Nizhny Novgorod
Email: bnv@nifti.unn.ru
Russian Federation, Nizhny Novgorod, 603950
M. V. Shaleev
Lobachevsky State University of Nizhny Novgorod; Institute for Physics of Microstructures
Email: bnv@nifti.unn.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
P. A. Yunin
Lobachevsky State University of Nizhny Novgorod; Institute for Physics of Microstructures
Email: bnv@nifti.unn.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
D. V. Yurasov
Lobachevsky State University of Nizhny Novgorod; Institute for Physics of Microstructures
Email: bnv@nifti.unn.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
A. N. Yablonskiy
Lobachevsky State University of Nizhny Novgorod
Email: bnv@nifti.unn.ru
Russian Federation, Nizhny Novgorod, 603950
Z. F. Krasilnik
Lobachevsky State University of Nizhny Novgorod; Institute for Physics of Microstructures
Email: bnv@nifti.unn.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950