Epitaxial AlxGa1 – xAs:Mg alloys with different conductivity types


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Abstract

The structural, optical, and energy properties of epitaxial AlxGa1 – xAs:Mg/GaAs(100) heterostructures at different levels of doping with Mg are studied by high-resolution X-ray diffraction analysis and Raman and photoluminescence spectroscopies. It is shown that, by choosing the technological conditions of AlxGa1–xAs:Mg alloy production, it is possible to achieve not only different conductivity types, but also substantially different charge-carrier concentrations in an epitaxial film.

About the authors

P. V. Seredin

Voronezh State University

Author for correspondence.
Email: paul@phys.vsu.ru
Russian Federation, Voronezh, 394006

A. S. Lenshin

Voronezh State University

Email: paul@phys.vsu.ru
Russian Federation, Voronezh, 394006

I. N. Arsentiev

Ioffe Physical–Technical Institute

Email: paul@phys.vsu.ru
Russian Federation, St. Petersburg, 194021

A. V. Zhabotinskii

Ioffe Physical–Technical Institute

Email: paul@phys.vsu.ru
Russian Federation, St. Petersburg, 194021

D. N. Nikolaev

Ioffe Physical–Technical Institute

Email: paul@phys.vsu.ru
Russian Federation, St. Petersburg, 194021

I. S. Tarasov

Ioffe Physical–Technical Institute

Email: paul@phys.vsu.ru
Russian Federation, St. Petersburg, 194021

V. V. Shamakhov

Ioffe Physical–Technical Institute

Email: paul@phys.vsu.ru
Russian Federation, St. Petersburg, 194021

Tatiana Prutskij

Instituto de Ciencias

Email: paul@phys.vsu.ru
Mexico, Puebla, 72050

Harald Leiste

Karlsruhe Nano Micro Facility

Email: paul@phys.vsu.ru
Germany, Eggenstein-Leopoldshafen, 76344

Monika Rinke

Karlsruhe Nano Micro Facility

Email: paul@phys.vsu.ru
Germany, Eggenstein-Leopoldshafen, 76344


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