Epitaxial AlxGa1 – xAs:Mg alloys with different conductivity types

Abstract

The structural, optical, and energy properties of epitaxial Al_xGa_{1 – x}As:Mg/GaAs(100) heterostructures at different levels of doping with Mg are studied by high-resolution X-ray diffraction analysis and Raman and photoluminescence spectroscopies. It is shown that, by choosing the technological conditions of Al_xGa_1–xAs:Mg alloy production, it is possible to achieve not only different conductivity types, but also substantially different charge-carrier concentrations in an epitaxial film.