Email this article Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers
- Authors: Blokhin S.A.1, Bobrov M.A.1, Blokhin A.A.1,2, Kuzmenkov A.G.2, Maleev N.A.1, Ustinov V.M.2, Kolodeznyi E.S.3, Rochas S.S.3, Babichev A.V.3, Novikov I.I.3, Gladyshev A.G.3, Karachinsky L.Y.1,4, Denisov D.V.4,5, Voropaev K.O.6,7, Ionov A.S.7, Egorov A.Y.3
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Affiliations:
- Ioffe Institute
- Research and Engineering Center for Submicron Heterostructures for Microelectronics
- ITMO University
- Connector Optics LLC
- St. Petersburg State Electrotechnical University “LETI”
- Yaroslav-the-Wise Novgorod State University
- OKB-Planeta PLC
- Issue: Vol 53, No 8 (2019)
- Pages: 1104-1109
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/206662
- DOI: https://doi.org/10.1134/S1063782619080074
- ID: 206662
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Abstract
The results of studying the dynamic characteristics of 1.55-μm single-mode vertical-cavity surface-emitting lasers (VCSELs) formed by the fusion of wafers of high-quality Bragg reflectors and an active region based on thin highly strained InGaAs/InAlGaAs quantum wells are presented. It is found that the proposed design of the active region and optical microcavity of the laser make it possible in principle to attain a high level of differential laser gain in the temperature range of 20°C–85°C, but weak electron localization leads to an increase in gain compression at elevated temperatures. Due to this fact, the VCSEL modulation bandwidth at 20°C can be increased from 9.2 to 11.5 GHz due to an increase in output optical losses, while the modulation bandwidth at 85°C does not exceed 8.5 GHz, depends weakly on the output optical losses, and is mainly limited by the optical-gain saturation.
About the authors
S. A. Blokhin
Ioffe Institute
Author for correspondence.
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. A. Bobrov
Ioffe Institute
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. A. Blokhin
Ioffe Institute; Research and Engineering Center for Submicron Heterostructures for Microelectronics
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021
A. G. Kuzmenkov
Research and Engineering Center for Submicron Heterostructures for Microelectronics
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. A. Maleev
Ioffe Institute
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. M. Ustinov
Research and Engineering Center for Submicron Heterostructures for Microelectronics
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
E. S. Kolodeznyi
ITMO University
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101
S. S. Rochas
ITMO University
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101
A. V. Babichev
ITMO University
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101
I. I. Novikov
ITMO University
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101
A. G. Gladyshev
ITMO University
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101
L. Ya. Karachinsky
Ioffe Institute; Connector Optics LLC
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194292
D. V. Denisov
Connector Optics LLC; St. Petersburg State Electrotechnical University “LETI”
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 194292; St. Petersburg, 197376
K. O. Voropaev
Yaroslav-the-Wise Novgorod State University; OKB-Planeta PLC
Email: blokh@mail.ioffe.ru
Russian Federation, Veliky Novgorod, 173003; Veliky Novgorod, 173004
A. S. Ionov
OKB-Planeta PLC
Email: blokh@mail.ioffe.ru
Russian Federation, Veliky Novgorod, 173004
A. Yu. Egorov
ITMO University
Email: blokh@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101
