Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics
- Authors: Novikov A.V.1,2, Yurasov D.V.1, Morozova E.E.1, Skorohodov E.V.1, Verbus V.A.1,3, Yablonskiy A.N.1, Baidakova N.A.1, Gusev N.S.1, Kudryavtsev K.E.1,2, Nezhdanov A.V.2, Mashin A.I.2
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Affiliations:
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Lobachevsky State University of Nizhny Novgorod
- National Research University Higher School of Economics
- Issue: Vol 52, No 11 (2018)
- Pages: 1442-1447
- Section: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204399
- DOI: https://doi.org/10.1134/S1063782618110167
- ID: 204399
Cite item
Abstract
The formation and properties of locally tensile strained Ge microstructures (“microbridges”) based on Ge layers grown on silicon substrates are investigated. The elastic-strain distribution in suspended Ge microbridges is analyzed theoretically. This analysis indicates that, in order to attain the maximum tensile strain within a microbridge, the accumulation of strain in all corners of the fabricated microstructure has to be minimized. Measurements of the local strain using Raman scattering show significant enhancement of the tensile strain from 0.2–0.25% in the initial Ge film to ~2.4% in the Ge microbridges. A considerable increase in the luminescence intensity and significant modification of its spectrum in the regions of maximum tensile strain in Ge microbridges and in their vicinity as compared to weakly strained regions of the initial Ge film is demonstrated by microphotoluminescence spectroscopy.
About the authors
A. V. Novikov
Institute for Physics of Microstructures, Russian Academy of Sciences; Lobachevsky State University of Nizhny Novgorod
Author for correspondence.
Email: anov@ipmras.ru
Russian Federation, Afonino, Nizhny Novgorod region, 603087; Nizhny Novgorod, 603950
D. V. Yurasov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: anov@ipmras.ru
Russian Federation, Afonino, Nizhny Novgorod region, 603087
E. E. Morozova
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: anov@ipmras.ru
Russian Federation, Afonino, Nizhny Novgorod region, 603087
E. V. Skorohodov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: anov@ipmras.ru
Russian Federation, Afonino, Nizhny Novgorod region, 603087
V. A. Verbus
Institute for Physics of Microstructures, Russian Academy of Sciences; National Research University Higher School of Economics
Email: anov@ipmras.ru
Russian Federation, Afonino, Nizhny Novgorod region, 603087; Nizhny Novgorod, 603155
A. N. Yablonskiy
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: anov@ipmras.ru
Russian Federation, Afonino, Nizhny Novgorod region, 603087
N. A. Baidakova
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: anov@ipmras.ru
Russian Federation, Afonino, Nizhny Novgorod region, 603087
N. S. Gusev
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: anov@ipmras.ru
Russian Federation, Afonino, Nizhny Novgorod region, 603087
K. E. Kudryavtsev
Institute for Physics of Microstructures, Russian Academy of Sciences; Lobachevsky State University of Nizhny Novgorod
Email: anov@ipmras.ru
Russian Federation, Afonino, Nizhny Novgorod region, 603087; Nizhny Novgorod, 603950
A. V. Nezhdanov
Lobachevsky State University of Nizhny Novgorod
Email: anov@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
A. I. Mashin
Lobachevsky State University of Nizhny Novgorod
Email: anov@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950