Electric-field sensor based on a double quantum dot in a microcavity
- Authors: Tsukanov A.V.1,2, Chekmachev V.G.1,2
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Affiliations:
- Moscow Institute of Physics and Technology
- Institute of Physics and Technology
- Issue: Vol 51, No 9 (2017)
- Pages: 1200-1207
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/201183
- DOI: https://doi.org/10.1134/S1063782617090214
- ID: 201183
Cite item
Abstract
A scheme for an optical quantum external-electric-field sensor based on a double quantum dot placed in a high-Q semiconductor microcavity is proposed. A model of the dynamic processes occurring in this system is developed, its spectral characteristics are investigated, and the noise stability of the sensor is examined. It is demonstrated that, owing to design features, the device has a number of advantages, including high sensitivity, the presence of different excitation and measurement channels, and the possibility of accurate determination of the spatial field distribution.
About the authors
A. V. Tsukanov
Moscow Institute of Physics and Technology; Institute of Physics and Technology
Email: vgchekmachev@mail.ru
Russian Federation, Moscow oblast, Dolgoprudny, 141701; Moscow, 117218
V. G. Chekmachev
Moscow Institute of Physics and Technology; Institute of Physics and Technology
Author for correspondence.
Email: vgchekmachev@mail.ru
Russian Federation, Moscow oblast, Dolgoprudny, 141701; Moscow, 117218