Electric-field sensor based on a double quantum dot in a microcavity
- 作者: Tsukanov A.V.1,2, Chekmachev V.G.1,2
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隶属关系:
- Moscow Institute of Physics and Technology
- Institute of Physics and Technology
- 期: 卷 51, 编号 9 (2017)
- 页面: 1200-1207
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/201183
- DOI: https://doi.org/10.1134/S1063782617090214
- ID: 201183
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详细
A scheme for an optical quantum external-electric-field sensor based on a double quantum dot placed in a high-Q semiconductor microcavity is proposed. A model of the dynamic processes occurring in this system is developed, its spectral characteristics are investigated, and the noise stability of the sensor is examined. It is demonstrated that, owing to design features, the device has a number of advantages, including high sensitivity, the presence of different excitation and measurement channels, and the possibility of accurate determination of the spatial field distribution.
作者简介
A. Tsukanov
Moscow Institute of Physics and Technology; Institute of Physics and Technology
Email: vgchekmachev@mail.ru
俄罗斯联邦, Moscow oblast, Dolgoprudny, 141701; Moscow, 117218
V. Chekmachev
Moscow Institute of Physics and Technology; Institute of Physics and Technology
编辑信件的主要联系方式.
Email: vgchekmachev@mail.ru
俄罗斯联邦, Moscow oblast, Dolgoprudny, 141701; Moscow, 117218
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